Instrucciones de instalación

SALIDA AL EXTERIOR DE LA SECADORA (cont.)

VENTILACIÓN LATERAL (cont.)

Abertura lateral

•Introduzca el conducto de 4” a través

de la abertura lateral y conéctelo al codo.

PRECAUCIÓN:UTILICE UN

CONDUCTO DE METAL RÍGIDO DE 4" SÓLO DENTRO DE LA SECADORA. LAS JUNTAS DEL CONDUCTO INTERNO DEBEN SUJETARSE CON CINTA; CASO CONTRARIO, PUEDEN SEPARARSE Y PROVOCAR UN RIESGO DE SEGURIDAD.

• Aplique cinta aislante

Cinta aislante

como puede verse

 

en la junta entre

 

el conducto interno

 

de la secadora y el

 

codo, y también en

 

la junta entre el codo

 

y el conducto lateral.

 

PRECAUCIÓN: Las juntas del conducto interno deben sujetarse con cinta; caso contrario, pueden separarse y provocar un riesgo de seguridad.

CÓMO AGREGAR LA PLACA DE CUBIERTA A LA PARTE TRASERA DEL GABINETE (SALIDA LATERAL)

Placa

(Kit WE1M454)

Conecte los codos y conductos de metal estándar para completar el sistema de salida. Cubra

la abertura trasera con la placa (Kit WE1M454), disponible en su proveedor de servicios local. Coloque la secadora en su ubicación final.

ADVERTENCIA:

NUNCA DEJE LA ABERTURA TRASERA

SIN LA PLACA EN SU LUGAR. (Kit WE1M454)

VENTILACIÓN POR LA PARTE INFERIOR

La secadora cuenta con una salida por la parte inferior del gabinete en modelos a gas y eléctricos.

ADVERTENCIA:

ANTES DE EFECTUAR ESTA INSTALACIÓN DE SALIDA, ASEGÚRESE DE DESCONECTAR LA SECADORA DEL SUMINISTRO ELÉCTRICO. PROTEJA SUS MANOS Y BRAZOS DE LOS LADOS AFILADOS CUANDO TRABAJE DENTRO DEL GABINETE. ASEGÚRESE DE USAR GUANTES.

Quite el tornillo y consérvelo

Parte

inferior Quite la tapa deseada (sólo una)

Quite el tornillo ubicado dentro del conducto de salida de la secadora y consérvelo. Saque el conducto de la secadora. Desconecte

y quite la tapa inferior.

Orificio de montaje

A

13 1⁄4″ 33.7 cm

Corte el conducto como puede verse y conserve la porción A.

133

Page 132 Page 134
Page 133
Image 133
GE PFMN440, PFDS450, PFDN440, PFMN445 Precauciónutilice UN, Ventilación Lateral, SIN LA Placa EN SU LUGAR. Kit WE1M454
Page 132 Page 134

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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