Instructions d’installation

RACCORDEMENT D’UNE sÉCHEUsE À GAZ (suite)

RACCORDEMENT DE LA sÉCHEUsE

À L’ALIMENTATION EN GAZ

AInstallez un coude femelle 3/8 po NPT à l’extrémité du raccord d’entrée de gaz de la sécheuse.

Installez un raccord adaptateur 3/8 po sur le coude femelle.

IMPORTANT : Utilisez une clé à tuyau pour tenir fermement l’extrémité du raccord d’entrée

de gaz de la sécheuse pour éviter de l’endommager.

REMARQUE : Appliquez un mastic d’étanchéité ou du ruban TeflonMD sur les filetages de l’adaptateur et du raccord d’entrée de gaz de la sécheuse.

Adaptateur

Tuyau de

 

Obturateur de

raccordement souple

 

 

1/8 po NPT pour

métallique neuf

 

 

vérification

 

 

Adaptateur

 

de la pression

 

à l’entrée de gaz

 

 

Coude

3/8 po NPT

Vanne d’arrêt

 

 

 

Matériel non fourni

 

Tuyau d’au

 

 

 

 

moins 1/2 po

BFixez le tuyau de raccordement métallique souple à l’adaptateur.

Appliquez du mastic sur l’adaptateur et l’entrée de gaz de la sécheuse.

CSerrez le raccord du tuyau de raccordement souple à l’aide de deux clés à molette.

RACCORDEMENT DE LA sÉCHEUsE À L’ALIMENTATION EN GAZ (sUITE)

DInstallez un obturateur 1/8 po NPT sur la vanne d’arrêt de la ligne de gaz de la sécheuse pour vérifier la pression d’entrée du gaz.

Installez un raccord adaptateur à l’obturateur.

REMARQUE : Appliquez un mastic d’étanchéité ou du ruban TeflonMD sur les filetages

de l’adaptateur et de l’obturateur.

Appliquez un mastic

 

d’étanchéité ou du

Obturateur

ruban TeflonMD sur tous

les filetages mâles.

 

Vanne d’arrêt

ESerrez tous les raccords à l’aide des deux clés à molette. Ne serrez pas trop fort.

FOuvrez la vanne d’arrêt de gaz.

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GE PFMS455, PFDS450 Raccordement DE LA sÉCHEUsE, ’Alimentation En Gaz, Installez un raccord adaptateur à l’obturateur
Page 70 Page 72

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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