Duct tape

Installation Instructions

EXHAUSTING THE DRYER (cont.)

SIDE VENTING (cont.)

ADDING ELBOW AND DUCT FOR EXHAUST TO LEFT OR RIGHT SIDE OF CABINET (cont.)

Apply duct tape as shown on the joint between the dryer internal duct and the elbow, and also the joint between the elbow and the side duct.

CAUTION: Use

4" rigid metal ducting only inside the dryer. Internal duct joints must be secured with tape, otherwise they may separate and cause a safety hazard.

ADDING COVER PLATE TO REAR OF CABINET (SIDE EXHAUST)

Plate

(Kit WE1M454)

Connect standard metal elbows and ducts to complete the exhaust system. Cover back opening with a plate (Kit WE1M454) available from your local service provider. Place dryer in final location.

WARNING – NEVER LEAVE

THE BACK OPENING WITHOUT THE PLATE.

(Kit WE1M454)

BOTTOM VENTING:

Dryer Exhaust to the bottom of cabinet for Gas and Electric models.

WARNING – BEFORE PERFORMING THIS EXHAUST INSTALLATION, BE SURE TO DISCONNECT THE DRYER FROM ITS ELECTRICAL SUPPLY. PROTECT YOUR HANDS AND ARMS FROM SHARP EDGES WHEN WORKING INSIDE THE CABINET. BE SURE TO WEAR GLOVES.

Remove screw and save

Bottom

Remove desired knockout (one only)

Remove the screw inside the dryer exhaust duct and save. Pull the duct out of the dryer. Detach and remove the bottom knockout.

Fixing hole

A

13 14

Cut the duct as shown and keep portion A.

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GE PFDN445, PFDS450 Exhausting the Dryer, Side Venting, Bottom Venting, Adding Cover Plate to Rear of Cabinet Side Exhaust

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.