Installation Instructions

REVERSING THE DOOR SWING (if desired)

REVERSE HINGE AND CAPS (CONT.)

•Assemble the hinge to the opposite side

of the inner door, using 4 screws (#8-32 x 0.50″ machine screws).

•Assemble the new inner door cap (from reversibility kit) on the opposite side of the hinge, using 2 screws (#8 x 0.75″ tapping screws).

•Install the the screws, nuts and washers on the opposite side of the hinge in the 2 remaining holes.

Hinge

Replace

 

 

2 x D

Replace

Replace

screws

4 x E

2 screws,

 

screws

Inner

2 nuts and

 

door cap

2 washers

 

•Flip the inner door so that the inner part faces down. Assemble the inner cover (mask), be sure the snaps have clamped the inner cover. Assemble the outer window, be sure the 2 snaps have clamped the outer window.

Outer window

Snap

Inner cover

 

(Mask)

Snap

 

38

5REASSEMBLE DOOR ASSEMBLY

Turn the inner door over and place on a soft, protected flat surface so that

the inner part is facing down. Assemble

the chrome cover to the inner door by placing them together.

Flip the door assembly over and assemble, using 7 screws (#10 x 1.125″ tapping screws).

7 x A Screws

6REVERSE FRONT PANEL PLUG BUTTONS AND STRIKE PLATE

Remove the 2 plug buttons on the dryer front panel, using a putty knife or other flat tool as shown, and reinstall on the opposite side. Switch the strike bracket and its cover by removing

2 screws (#8 x 0.625″ tapping screws) for each and reinstalling on opposite sides.

2 Plug buttons

Protective piece of tape

Strike bracket

NOTE: Apply a protective piece of tape to the side of the plug button where the putty knife blade will be inserted to prevent scratching.

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GE PFDN445, PFDS450, PFDN440, PFMN445, PFDS455 Reassemble Door Assembly, Reverse Front Panel Plug Buttons and Strike Plate
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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