Manuals / GE / Laundry Appliance / Clothes Dryer

GE PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFMN440, PFDN445, PFMS455 Final Setup

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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Installation Instructions

FINAL SETUP

1LEVEL THE DRYER

Stand the dryer upright near the final location and adjust the four leveling legs at the corners to ensure that the dryer is level from side to side and front to rear.

Raise Lower

2ATTACH SERIAL CABLE

Attach the serial cable for washer and dryer connection to the serial port on the back of the dryer.

Attach the other end of the cable to the washer before pushing the washer into its final position.

Serial Port

Rear of

Dryer

3PLUG DRYER IN

Ensure proper ground exists before use.

4GROUNDING INSTRUCTIONS

This appliance must be grounded. In the event of malfunction or breakdown, grounding will reduce the risk of electric shock by providing a path of least resistance for electric current. This appliance is equipped with a cord having an equipment-grounding conductor and a grounding plug. The plug must be plugged into an appropriate outlet that is properly installed and grounded in accordance with all local codes and ordinances.

5DRYER STARTUP

Press the POWER button.

NOTE: If the dryer has been exposed to temperatures below freezing for an extended period of time, allow it to warm up before pressing POWER. Otherwise, the display will not come on.

The dryer is now ready for use.

SERVICING

WARNING – Label all wires prior to disconnection when servicing controls. Wiring errors can cause improper and dangerous operation after servicing/installation.

For replacement parts and other information, refer to the back cover for servicing phone numbers.

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GE PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFMN440, PFDN445, PFMS455 operating instructions Final Setup
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.