Instructions d’installation

INsTALLATION DU sOCLE (optionnel)

MIsE EN GARDE — En raison de la

taille et du poids de ces appareils et afin de réduire le risque de blessure ou de dommage matériel, L’INsTALLATION DOIT êTRE EFFECTUÉE PAR DEUX PERsONNEs.

CONTENU D’ENsEMBLE

r4 cales de support rCloison du tiroir

r4 vis d’assemblage

OUTILs NÉCEssAIREs

rTournevis cruciforme rClé à douille 7 mm

rClé à fourche 9/16 po ou clé à molette

COMMENT PRÉPARER L’INsTALLATION

Retirez l’emballage.

La cloison du tiroir est collée à l’aide de ruban adhésif sur le dessus du carton d’emballage. Retirez la cloison et mettez-la de côté pour l’installation finale.

Aplatissez le carton pour l’utiliser comme cale pour poser la sécheuse sur le côté. Utilisez le carton pour protéger également le sol en face de l’endroit choisi pour l’installation.

1 COMMENT RETIRER LEs PIEDs

ADéposez avec précaution la laveuse

ou la sécheuse sur le côté pour accéder aux pieds situés au bas de l’appareil.

IMPORTANT : Ne déposez pas la sécheuse

ou la laveuse sur sa partie arrière ! Ne retirez pas les boulons de transport situés à l’arrière de la laveuse. Les boulons doivent rester en place jusqu’à ce que la laveuse soit remise debout.

BUtilisez une clé à fourche pour retirer les pieds de la laveuse ou de la sécheuse.

Faites sortir et retirez les 4 pieds

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GE PFDN445, PFDS450, PFDN440, PFMN445 MIsE EN Garde En raison de la, Contenu D’ENsEMBLE, Comment Préparer L’INsTALLATION

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.