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GE PFDS450, PFDN440 Comment INVERsER LA Charnière ET LEs COUVERCLEs, Vis taraudeuses #8 x 0,75 po

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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Instructions d’installation

3COMMENT INVERsER LA POIGNÉE ET LEs COUVERCLEs DE LA PORTE (sUITE)

ERéinstallez la poignée interne sur la poignée externe à l’aide des 3 vis (vis taraudeuses #8 x 0,625 po).

3 x D Vis

(Poignée

interne)

Poignée

extérieure

FInstallez le nouveau couvercle de porte du côté droit (de l’ensemble d’inversion) à l’aide des 2 vis (vis taraudeuses #8 x 0,625 po).

2 x D Vis

Couvercle de porte

Déposez le couvercle en chrome sur une surface plane, lisse et protégée.

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4COMMENT INVERsER LA CHARNIÈRE ET LEs COUVERCLEs

•Posez la porte intérieure face vers le bas sur une surface plate protégér, douce pour que la partie intérieure soit tournée vers le bas.

Démontez le hublot en ouvrant 2 fermoirs, posez le hublot sur une surface plate protégée, douce.

•Démontez le couvercle intérieur (cache) en ouvrant 2 fermoirs, posez le couvercle intérieur (cache) sur une surface plate protégée, douce.

Hublot

Fermoir

Couvercle intérieur (cache)

Fermoir

•Tournez la porte intérieure sur une surface plate protégée, douce pour que la partie intérieure soit tournée vers le haut.

•Déposez les vis, écrous et rondelles du côté opposé de la charnière, avec un tournevis quadrex.

•Démontez le couvercle de la porte intérieure de la contre-porte en retirant 2 vis

(vis taraudeuses #8 x 0,75 po).

•Démontez la charnière de la porte interne en retirant 4 vis (vis taraud #8-32 x 0,50 po).

 

 

 

Couvercle

 

 

 

de porte

 

 

 

intérieure

 

 

2 vis,

2 x D Vis

 

Retirez

2 écrous

 

 

et 2

 

 

4 x E vis

 

Charnière

rondelles

 

 

 

 

 

 

Page 87 Page 89
Page 88
Image 88
GE PFDS450, PFDN440, PFMN445, PFDS455, PFMS450 Comment INVERsER LA Charnière ET LEs COUVERCLEs, Vis taraudeuses #8 x 0,75 po
Page 87 Page 89

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.