Manuals / GE / Laundry Appliance / Clothes Dryer

GE PFMS450 Cómo Invertir LA Manija LAS Tapas DE LA Puerta, Cómo Invertir LAS Bisagras Y Tapas

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

1 156
Download 156 pages 51.08 Kb
Page 140
Image 140

Instrucciones de instalación

3CÓMO INVERTIR LA MANIJA

Y LAS TAPAS DE LA PUERTA (CONT.)

EVuelva a armar la manija externa de la cubierta de cromo, utilizando 3 tornillos (tornillos auto-roscantes #8 x 0.625”).

3 x D Tornillos (manija interna)

Manija exterior

FArme la nueva tapa de la puerta del lado derecho (del kit de reversibilidad), utilizando

2 tornillos (tornillos auto-roscantes #8 x 0.625”).

2 x D Tornillos

Tapa de la puerta

4CÓMO INVERTIR LAS BISAGRAS Y TAPAS

Ventana exterior

Traba

Cubierta

 

interior

Traba

(máscara)

 

•Gire la puerta interior sobre una superficie plana, suave y protegida de modo que la parte interior mire hacia arriba.

•Quite los tornillos, tuercas y arandelas del lado opuesto de la bisagra utilizando un destornillador quadrex.

•Arme la nueva tapa de la puerta interna (del kit de reversibilidad) sobre el lado opuesto de la bisagra, utilizando 2 tornillos (tornillos auto-roscantes #8 x 0.75”).

•Coloque la bisagra en el lado opuesto de la puerta interna utilizando 4 tornillos (tornillos mecánicos #8-32 x 0.50”).

Coloque la cubierta de cromo en una superficie plana, suave y protegida.

4CÓMO INVERTIR LAS BISAGRAS Y TAPAS

•Coloque la puerta interior sobre una superficie plana, suave y protegida de modo que la parte interior mire hacia abajo. Desarme la ventana exterior abriendo 2 trabas, coloque la ventana exterior sobre una superficie plana, suave y protegida.

•Desarme la cubierta interior (máscara) abriendo 2 trabas, coloque la cubierta interior (máscara) sobre una superficie plana, suave y protegida.

 

Quite

 

4 x E

Bisagra

tornillos

Tapa de puerta interna

2 tornillos,

2 x D

2 tuercas y

Tornillos

2 arandelas

 

140

Page 139 Page 141
Page 140
Image 140
GE PFMS450, PFDS450, PFDN440, PFMN445 Cómo Invertir LA Manija LAS Tapas DE LA Puerta, Cómo Invertir LAS Bisagras Y Tapas
Page 139 Page 141

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.