Instrucciones de instalación

4CÓMO INVERTIR LA MANIJA

Y LAS TAPAS DE LA PUERTA (CONT.)

•Coloque la bisagra en el lado opuesto de la puerta interna utilizando 4 tornillos (tornillos mecánicos #8-32 x 0.50”).

•Arme la nueva tapa de la puerta interna (del kit

de reversibilidad) sobre el lado opuesto de la bisagra, utilizando 2 tornillos (tornillos auto-roscantes #8 x 0.75”).

•Instale los tornillos, tuercas y arandelas sobre el lado opuesto de la bisagra en los 2 orificios restantes.

5CÓMO VOLVER A COLOCAR

EL MONTAJE DE LA PUERTA

Dé vuelta la puerta interior y colóquela sobre una superficie plana, suave y protegida de modo que la parte interior mire hacia abajo. Sujete la cubierta de cromo a la puerta interior colocándolas juntas. Dé vuelta el montaje de la puerta y ármelo utilizando 7 tornillos (tornillos auto-roscantes #10 x 1.125”).

Vuelva a colocar 2 x D tornillos

Tapa de puerta interna

Vuelva a

colocar los 2 tornillos, 2 tuercas y 2 arandelas

Bisagra

Vuelva a

colocar

4 x E

tornillos

7 x A Tornillos

•Dé vuelta la puerta interior para que la parte interior se dirija hacia abajo. Arma la cubierta interior (máscara) y asegúrese de que las trabas se hayan fijado a la cubierta interior. Arma la ventana exterior y asegúrese de que las 2 trabas se hayan fijado a la ventana exterior.

6CÓMO INVERTIR LOS BOTONES OBTURADORES DEL PANEL FRONTAL Y LA PLACA DE CERRADO

Ventana exterior

Cubierta

Traba

Quite los 2 botones obturadores del panel frontal de la secadora utilizando una espátula u otra herramienta plana como se muestra y vuelva a instalarlos en el lado opuesto. Cambie el soporte de cerrado y su cubierta quitando 2 tornillos (tornillos auto-roscantes #8 x 0.625”) en cada uno y reinstalándolos en lados opuestos.

2 botones obturadores

Trozo de cinta protectora

Soporte de cerrado

interior

(máscara) Traba

NOTA: Aplique un trozo de cinta protectora al costado del botón obturador donde se introducirá la hoja

de la espátula para evitar rayones.

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GE PFMN440, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFDN445, PFMS455 Cómo Volver a Colocar EL Montaje DE LA Puerta
Page 140 Page 142

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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