Instructions d’installation

INVERsION DE L’OUVERTURE DE LA PORTE (optionnel) (suite)

REVERsE HINGE AND CAPs (CONT.)

•Installez la charnière sur le côté opposé de la contre-porte à l’aide de 4 vis

(vis taraudeuses #8 x 0,50 po).

•Installez le nouveau couvercle de la porte intérieure (de l’ensemble d’inversion) sur le côté opposé de la charnière à l’aide de 2 vis

(vis taraudeuses #8 x 0,75 po).

•Installez les vis, écrous et rondelles du côté opposé de la charnière dans les 2 trous restants.

5COMMENT RÉINsTALLER LA PORTE

Retournez la contre-porte et placez-la sur une surface lisse, plane et protégée de sorte que la partie intérieure soit placée vers le bas. Assemblez

le couvercle en chrome sur la contre-porte en

les plaçant l’un contre l’autre. Inversez la porte et procédez à son assemblage en utilisant 7 vis (vis taraudeuses #10 x 1,125 po).

Replacez 2 x D vis

Couvercle de porte intérieure

Charnière

Replacez Remettez en 4 x E vis

place 2 vis,

2 écrous et

2 rondelles

7 x A vis

•Retournez la porte intérieure pour que la pièce intérieure soit tournée vers le bas. Assemblez le couvercle intérieur (cache), assurez-vous que les fermoirs ont pincé le couvercle intérieur. Assemblez le hublot, assurez-vous que les 2 fermoirs ont pincé le hublot.

Hublot

Fermoir

Couvercle

 

intérieur

Fermoir

(cache)

 

89

6COMMENT INVERsER

LEs CAPUCHONs ET LA GÂCHE DU PANNEAU AVANT

Retirez les 2 capuchons du panneau avant de la sécheuse, à l’aide d’un couteau à mastic ou de tout autre outil plat comme illustré, et réinstallez-les sur le côté opposé. Pivotez la gâche et son couvercle en retirant 2 vis (vis taraudeuses #8 x 0,625 po) et en les réinstallant sur le côté opposé.

2 Capuchons

Morceau de ruban gommé

Support

de la gâche

REMARQUE : Posez un morceau de ruban gommé sur le côté du capuchon sous lequel la lame du couteau à mastic sera introduite afin d’éviter les rayures.

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Image 89
GE PFDN440, PFDS450, PFMN445, PFDS455, PFMS450, PFMN440 REVERsE Hinge and CAPs, Comment RÉINsTALLER LA Porte, Comment INVERsER
Page 88 Page 90

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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