Installation Instructions

3INSTALL BRACKET TO DRYER

A.Align the holes in the left bracket with the holes in the bottom left corner of the dryer. Use a Phillips screwdriver to install the 2 #12 x 1″ tapping screws.

B.Repeat the above step with the right bracket on the bottom right corner of the dryer.

C.Set the dryer upright.

NOTE: Make sure to set the dryer on a piece of packing material so the brackets that are attached to the bottom of the dryer do not damage the floor.

4INSTALL DRYER AND BRACKET ON WASHER

A.Lift the dryer on top of the washer. Be careful not to scratch the top of the washer with the brackets. Protect the washer control panel with cardboard or other protection. Be sure to lift the dryer high enough to clear the washer control panel.

WARNING – Potential Personal Injury. More than two people are recommended to lift the dryer into position because of its weight and size. Failure to do so could result in personal injury or death.

B.Align the holes in the bracket with the holes in the back of the washer. Using a Phillips screwdriver, attach the 2 #8 x 1/2″ tapping screws. Repeat on both sides of the washer.

5FINALIzE THE INSTALLATION

A.Refer to the washer Installation Instructions to complete the washer installation.

B.Refer to the dryer Installation Instructions to complete the dryer installation.

C.Carefully slide or walk the stacked washer and dryer into place. Use felt pads or other sliding device to assist moving and to protect flooring.

WARNING – Potential Personal Injury. Do not push on the dryer once installed to top of the washer. Pushing on the dryer may result in pinched fingers.

Place hands here

Place

hands

here

42

Page 41 Page 43
Page 42
Image 42
GE PFMN445, PFDS450, PFDN440 Install Bracket to Dryer, Install Dryer and Bracket on Washer, FINALIzE the Installation
Page 41 Page 43

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
Top Page Image Contents