LGA1155 Socket and ILM Electrical, Mechanical and Environmental Specifications
Table | Electrical Requirements for LGA1155 Socket | ||
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| Parameter | Value | Comment |
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| The inductance calculated for two contacts, |
| Mated loop inductance, Loop | <3.6 nH | considering one forward conductor and one |
| return conductor. These values must be satisfied | ||
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| at the |
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| The socket average contact resistance target is |
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| calculated from the following equation: |
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| sum (Ni X LLCRi) / sum (Ni) |
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| • LLCRi is the chain resistance defined as the |
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| resistance of each chain minus resistance of |
| Socket Average Contact Resistance | 19 mOhm | shorting bars divided by number of lands in |
| (EOL) | the daisy chain. | |
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| • Ni is the number of contacts within a chain. |
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| • I is the number of daisy chain, ranging from |
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| 1 to 119 (total number of daisy chains). |
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| The specification listed is at room temperature |
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| and has to be satisfied at all time. |
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| The specification listed is at room temperature |
| Max Individual Contact Resistance | 100 mOhm | and has to be satisfied at all time. |
| Socket Contact Resistance: The resistance of | ||
| (EOL) | ||
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| the socket contact, solderball, and interface | |
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| resistance to the interposer land; gaps included. |
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| Bulk Resistance Increase | ≤ 3 mΩ | The bulk resistance increase per contact from |
| 25°C to 100°C. | ||
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| Dielectric Withstand Voltage | 360 Volts RMS |
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| Insulation Resistance | 800 MΩ |
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5.5Environmental Requirements
Design, including materials, shall be consistent with the manufacture of units that meet the following environmental reference points.
The reliability targets in this section are based on the expected field use environment for these products. The test sequence for new sockets will be developed using the
Thermal/Mechanical Specifications and Design Guidelines | 39 |