NXP Semiconductors
DRAFT | D | D |
| AFT |
RAFT | RAFT AFT | |||
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| DR | DR |
DLPC2917/19
ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT
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| T | DRAFT |
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| DRA |
| DRA |
| DR | ||
| DD(CORE) |
| DD(OSC_PLL) |
| DD(IO) |
| DD(A3V3) |
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| vj |
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V | = V | ; V |
| = 3.0 V to 3.6 V; T | = | DRAFT DRAFT | DRAF | |||||||||||
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| = 2.7 V to 3.6 V; V |
| °C; all voltages are |
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Table 30. Static characteristics …continued |
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measured with respect to ground; positive currents flow into the IC; unless otherwise specified.[1] |
| DRAFTUnit |
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Symbol |
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| Min | Typ | Max |
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Rs(xtal) |
| Crystal series resistance. | fosc = 10 MHz to 15 MHz | [5] |
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| DRAFT | D | ||||||||
Oscillator |
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Cxtal = 10 pF; | - | - | 160 | Ω |
Cext = 18 pF |
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DRA
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| Cxtal = 20 pF; |
| - | - | 60 | Ω |
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| Cext = 39 pF |
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| fosc = 15 MHz to 20 MHz | [5] |
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| Cxtal = 10 pF; |
| - | - | 80 | Ω |
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Ci | Input capacitance of | [9] | - |
| 2 | pF | |
| XIN_OSC. |
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Vtrip(high) | High | [6] | 1.2 | 1.4 | 1.6 | V | |
Vtrip(low) | Low | [6] | 1.1 | 1.3 | 1.5 | V | |
Vtrip(dif) | Difference between high | [6] | 50 | 120 | 180 | mV | |
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voltages.
[1]All parameters are guaranteed over the virtual junction temperature range by design.
[2]Leakage current is exponential to temperature;
[3]For Port 0, pin 0 to pin 15 add maximum 1.5 pF for input capacitance to ADC. For Port 0, pin 16 to pin 31 add maximum 1.0 pF for input capacitance to ADC.
[4]This value is the minimum drive capability. Maximum
[5]Cxtal is crystal load capacitance and Cext are the two external load capacitors.
[6]The
[7]Not 5
[8]For I/O Port 0, the maximum input voltage is defined by VI(ADC).
[9]This parameter is not part of production testing or final testing, hence only a typical value is stated. Maximum and minimum values are based on simulation results.
12. Dynamic characteristics
Table 31. Dynamic characteristics
VDD(CORE) = VDD(OSC_PLL) ; VDD(IO) = 2.7 V to 3.6 V; VDD(A3V3) = 3.0 V to 3.6 V; Tvj = −40 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
I/O pins |
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tTHL | CL = 30 pF | 4 | - | 13.8 | ns | |
| transition time. |
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tTLH | CL = 30 pF | 4 | - | 13.8 | ns | |
| transition time. |
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LPC2917_19_1 |
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| © NXP B.V. 2007. All rights reserved. |
Preliminary data sheet | Rev. 1.01 — 15 November 2007 | 55 of 68 |