Solid State Devices (13)

Variable

Description

 

 

αF

Forward common-base current gain

αR

Reverse common-base current gain

γBody factor

λModulation parameter

n

Electron mobility

φp

Fermi potential

ΔL

Length adjustment (PN Step Junctions), or

Channel encroachment (NMOS Transistors)

 

ΔW

Width adjustment (PN Step Junctions), or

Width contraction (NMOS Transistors)

 

aChannel thickness

Aj

Effective junction area

BV

Breakdown voltage

Cj

Junction capacitance per unit area

Cox

Silicon dioxide capacitance per unit area

E1

Breakdown-voltage field factor

Emax

Maximum electric field

G0

Channel conductance

gds

Output conductance

gm

Transconductance

IDiode current

IB

Total base current

IC

Total collector current

ICEO

Collector current (collector-to-base open)

ICO

Collector current (emitter-to-base open)

ICS

Collector-to-base saturation current

ID, IDS

Drain current

IE

Total emitter current

IES

Emitter-to-base saturation current

IS

Transistor saturation current

JCurrent density

5-50 Equation Reference