Variable

Description

 

 

Js

Saturation current density

L

Drawn mask length (PN Step Junctions), or

Drawn gate length (NMOS Transistors), or

 

Channel length (JFETs)

Le

Effectives gate length

NA

Pside doping (PN Step Junctions), or

Substrate doping (NMOS Transistors)

 

ND

Nside doping (PN Step Junctions), or

Nchannel doping (JFETs)

 

TTemperature

tox

Gate silicon dioxide thickness

Va

Applied voltage

VBC

Basetocollector voltage

VBE

Basetoemitter voltage

Vbi

Builtin voltage

VBS

Substrate voltage

VCEsat

Collectortoemitter saturation voltage

VDS

Applied drain voltage

VDsat

Saturation voltage

VGS

Applied gate voltage

Vt

Threshold voltage

Vt0

Threshold voltage (at zero substrate voltage)

W

Drawn mask width (PN Step Junctions), or

Drawn width (NMOS Transistors), or

 

Channel width (JFETs)

We

Effective width

xd

Depletionregion width

xdmax

Depletionlayer width

xj

Junction depth

 

 

References: 5, 8.

 

Equation Reference 551

Page 487
Image 487
HP 48gII Graphing, 50g Graphing Saturation current density, Drawn mask length PN Step Junctions, or, Channel length JFETs