Variable

Description

 

 

Js

Saturation current density

L

Drawn mask length (PN Step Junctions), or

Drawn gate length (NMOS Transistors), or

 

Channel length (JFETs)

Le

Effectives gate length

NA

P-side doping (PN Step Junctions), or

Substrate doping (NMOS Transistors)

 

ND

N-side doping (PN Step Junctions), or

N-channel doping (JFETs)

 

TTemperature

tox

Gate silicon dioxide thickness

Va

Applied voltage

VBC

Base-to-collector voltage

VBE

Base-to-emitter voltage

Vbi

Built-in voltage

VBS

Substrate voltage

VCEsat

Collector-to-emitter saturation voltage

VDS

Applied drain voltage

VDsat

Saturation voltage

VGS

Applied gate voltage

Vt

Threshold voltage

Vt0

Threshold voltage (at zero substrate voltage)

W

Drawn mask width (PN Step Junctions), or

Drawn width (NMOS Transistors), or

 

Channel width (JFETs)

We

Effective width

xd

Depletion-region width

xdmax

Depletion-layer width

xj

Junction depth

 

 

References: 5, 8.

 

Equation Reference 5-51