Intel manual Silicon Gate MOS M8080A, ~I~

SILICON GATE MOS M8080A

A.C. CHARACTERISTICS

TA =-55°C to +125°C, Voo =+12V ±10%, Vee = +5V ±10%, VBB = -5V ±10%, Vss = OV, Unless Otherwise Noted.

Symbol			Parameter			Min.	Max.	Unit		Test Condition
tCy[3]	Clock Period					0.48	2.0	Jisec
t r , tf	Clock Rise and Fall Time					0	50	nsec
t(/>l	epl	Pulse Width				60		nsec
tep2	cI>2	Pulse Width				220		nsec
t01	Delay epl to 4>2					0		nsec
t02	Delay ~2 to ~1					80		nsec
t03	Delay ~1 to ~2 Leading Edges					80		nsec	-
tOA [2)	Address Output Delay From ~2						200	nsec
too [2]	Data Output Delay From ~2						220	nsec
toc [2]	Signal Output Delay From ~1, or ~2 (SYNC, WR,WAIT,HLDA)						140	nsec	-	CL =50pf
tOF [2]	DBIN Delay From ep2					25	150	nsec
									-
tOI[l)	Delay for Input Bus to Enter Input Mode						tOF	nsec
tOSl	Data Setup Time During ~1 and DBIN					30		nsec
TIMING WAVEFORMS [14]			(Note: Timing measurements are made at the following reference voltages: CLOCK "1" = 7.0V,
				"0" = 1.0V; INPUTS "1" = 3.0V, "0" = 0.8V; OUTPUTS "1" = 2.0V, "0" = 0.8V.)
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5-35