SILICON GATE MOS 81078·4

Absolute Maximum Ratings*

Temperature Under Bias

ooc to 70°C

Storage Temperature

-65°C to +1500 C

All I nput or Output Voltages with Respect to the most Negative Supply Voltage, Vee

.. +25V to -O.3V

Supply Voltages Vee, Vcc, and Vss with Respect to Vee

.. +20V to -O.3V

Power Dissipation

1.25W

*COMMENT:

Stresses above those listed under ''Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

D.C. and Operating Characteristics

TA = 0°C to 70°C, Voo = +12V ± 5%, Vcc = +5V ± 5%, Vss [1] = -5V ± 5%, Vss = OV, unless otherwise noted.

Symbol

Parameter

 

Limits

 

Unit

Conditions

 

Min.

Typ.[2]

Max.

 

 

 

 

 

 

III

Input Load Current

 

.01

10

JJA

VIN = VIL MIN to V,H MAX

(all inputs except CE)

 

 

 

 

 

 

 

 

Ilc

Input Load Current

 

.01

10

JJA

V,N = V,L MIN to V,H MAX

Illol

Output Leakage Current

 

.01

10

JJA

CE = VILC or CS = V,H

 

for high impedance state

 

 

 

 

Vo =OV to 5.25V

 

1001

Voo Supply Current

 

110

200

JJA

CE =-1V to +.6V

 

during CE off[3]

 

 

 

 

 

 

 

 

 

'002

Voo Supply Current

 

80

100

mA

CE = V,HC, T A = 25°C

during CE on

 

 

 

 

 

 

 

 

100 AV1

Average Vo o Current

 

55

80

mA

Cycletime=470ns,

}

 

 

 

 

 

 

tCE =300ns

TA = 250C

IOOAV2

Average Voo Current

 

27

40

rnA

Cycle time =1000ns,

 

 

 

 

 

 

 

tCE = 300ns

 

ICC1 [4]

Vec Supply Current

 

.01

10

JJA

-

 

during CE off

 

CE = V'LC or CS = V,H

 

 

 

 

 

 

 

Iss

VeB Supply Cu rrent

 

5

100

JJA

 

 

Vil

Input Low Voltage

-1.0

 

0.6

V

tT= 20ns - See Figure 4

VIH

Input High Voltage

2.4

 

VCC+l

V

 

 

VllC

CE Input Low Voltage

-1.0

 

+1.0

V

 

 

VIHC

CE Input High Voltage

Voo-l

 

Voo+1

V

 

 

Val

Output Low Voltage

0.0

 

0.45

V

IOl = 2.0mA

 

VO H

Output High Voltage

2.4

 

Vec

V

'OH= -2.0mA

 

NOTES:

1.The only requirement for the sequence 'ofapplying voltage to the device is that VOO, VCC, and VSS should never be .3V more negative than VSS.

2.Typical values are for TA = 25°C and nominal power supply voltages.

3.The I DO and ICC currents flow to VSS'The IBe current is the sum of all leakage currents.

4.During CE on VCC supply current is dependent on output loading, VCC is connected to output buffer only.

5-84

Page 149 Page 151
Page 150
Image 150
Intel 8080 manual Silicon Gate MOS 81078·4, IOOAV2
Page 149 Page 151

8080 specifications

The Intel 8085 and 8080 microprocessors were groundbreaking innovations in the world of computing, paving the way for future microprocessor development and personal computing.

The Intel 8080, introduced in 1974, was an 8-bit microprocessor that played a fundamental role in the early days of personal computing. With a 16-bit address bus, it had the capability to address 64 KB of memory. Running at clock speeds of 2 MHz, the 8080 was notable for its instruction set, which included 78 instructions and 246 opcodes. It supported a range of addressing modes including direct, indirect, and register addressing. The 8080 was compatible with a variety of peripherals and played a crucial role in the development of many early computers.

The microprocessor's architecture was based on a simple and efficient design, making it accessible for hobbyists and engineers alike. It included an 8-bit accumulator, which allowed for data manipulation and storage during processing. Additionally, the 8080 featured registers like the program counter and stack pointer, which facilitated program flow control and data management. Its ability to handle interrupts also made it suitable for multitasking applications.

The Intel 8085, introduced in 1976, was an enhancement of the 8080 microprocessor. It maintained a similar architecture but included several key improvements. Notably, the 8085 had a built-in clock oscillator, simplifying system design by eliminating the need for external clock circuitry. It also featured a 5-bit control signal for status line management, which allowed for more flexible interfacing with peripheral devices. The 8085 was capable of running at speeds of up to 3 MHz and had an extended instruction set with 74 instructions.

One of the standout features of the 8085 was its support for 5 extra instructions for stack manipulation and I/O operations, which optimized the programming process. Additionally, it supported serial communication, making it suitable for interfacing with external devices. Its 16-bit address bus retained the 64 KB memory addressing capability of its predecessor.

Both the 8080 and 8085 microprocessors laid the groundwork for more advanced microprocessors in the years that followed. They demonstrated the potential of integrated circuits in computing and influenced the design and architecture of subsequent Intel microprocessors. Their legacy endures in the way they revolutionized computing, making technology accessible to a broader audience, and their influence is still felt in the design and architecture of modern microprocessors today.
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