Intel 8080 85o-·-···T, +--~~~TL~~~EEt~~~P-.±, Capacitance T a = 25C, f = 1MHz, Conditions of Test

Models: 8080

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SILICON GATE MOS 8102-2

A.C. CHARACTERISTICS TA =ooe to 70oe, Vee =5V ±5% unless otherwise specified

 

 

 

 

 

 

 

--·---

LIMITS

 

 

 

SYMBOL

 

PARAMETER

 

 

 

r----

 

mT----

UNIT

READ CYCLE

 

 

 

 

 

_.~~_~..._...

l}YP._

...

..L _~?<~. _._

 

 

 

 

 

 

 

85o-·-···T

-._-"--r .-_._.- --"---'-

 

--tR-e------r-R--EA~D-C-Y--C-L-E--·-------_ ..---------

 

ns

~~~~~~~---

~--------

~-_ .._-----

~--~--

-_._ ~._------

 

~ ---

--~

 

 

 

 

-----~_. -_.-

-.---~-.- -----

-_.--.--.~-------.-----.--. ...

- - _..---- ---1------- ----t···--- _._.-

 

t A

ACCESS TIME

 

 

 

 

 

I

500

i

850

 

ns

teo

CHIP ENABLE TO OUTPUT TIME

 

 

.

 

:

 

 

I

500

 

ns

 

~ ------

_ ---

 

 

 

---+

 

 

.._--l-.

 

~ ---

t OH1

PREVIOUS READ DATA VALID WITH RESPECT

 

 

50

I

 

 

 

 

 

os

 

TO ADDRESS

 

 

 

 

 

:

 

 

 

 

 

 

---------- 4 ---------

 

 

 

 

------ ·l - _.-_..-- .. ---- ---~----.

 

 

 

PREVIOUS READ DATA VALID WITH RESPECT

 

 

a

I

 

 

1

 

 

ns

 

TO CHIP ENABLE

 

 

 

 

 

i

 

 

_____:"__

 

-- J -

_

WRITE CYCLE

 

 

 

 

 

 

 

 

 

 

 

 

 

--~-C----

~W-R-I-T-E-C-Y-C-L-E----------------

 

T--8-~-r--~-~-

!

M

------ . ---- + ---- . ----- ...--.-.-----

.... -- . -------------------..

--

. __ ....

__ 1_ --

 

-

+ .

-..-.-t-------

tAW

ADDRESS TO WRITE SETUP TIME

 

 

I

200'

 

 

:

 

!

ns

 

 

 

. ----- ------ +i..--.----+-.-.-----.--..---~---.-----~---

~_tw_p

+_ -R-IT-E-P-U-L-S- -W-IDTH

 

 

 

I~~

L_.

 

 

.+- ...-n_--li---ns_-

tWR

WRITE RECOVERY TIME

 

 

--t

50:

 

 

!

 

I

ns

-----------

1t-------------------------

 

+------

~~:-------

 

 

..~

 

i

 

::_:

-+--~_:_~_:_:_~_T_L~_~~EEt~~~P-.±--

=~=~L~==--

+---

~-:-

t cw

CHIP ENABLE TO WRITE SETUP TIME

 

 

I

750!

 

 

;

 

 

ns

(1)Typical values are for T A=250 C and nominal supply voltage.

 

 

 

CAPACITANCE TA = 25°C, f = 1MHz

 

 

 

 

 

 

 

._------_._-----

LIMITS (pF)

A. C. CONDITIONS OF TEST

 

SYMBOL

TEST

 

 

 

TYP.

MAX.

Input Pulse Levels:

+0.65 Volt to 2.2 Volt

 

 

---------_.- - _.--.._---- --

 

 

 

 

Input Pulse Rise and Fall Times:

20nsec

CIN

INPUT CAPACITANCE

3

5

 

 

 

 

 

(ALL INPUT PINS) ViN :: OV

Timing Measurement Reference Level:

1.5 Volt

COUT

 

 

Output Load:

1 TTL Gate and CL

= 100 pF

OUTPUT CAPACITANCE

7

10

 

 

VOUT = OV

 

 

 

 

 

 

 

WAVEFORMS

 

 

 

 

 

 

 

READ CYCLE

 

 

WRITE CYCLE

 

 

t4-------tRC-----~

 

t4-------twc---------I~

 

ADDRESS

 

 

 

 

 

 

 

 

teo

 

 

 

 

 

 

CHIP

 

 

CHIP

 

..-----tew~----~I

 

 

 

 

 

 

 

ENABLE

 

 

ENABLE

 

 

 

~----tA-----""

 

 

 

~~----twP------...I

 

 

 

 

 

 

 

DATA

 

 

READ/

 

 

 

 

OUT

 

 

 

 

 

 

 

 

WRITE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

~----tow----~~

 

 

 

 

DATA

DATA CAN

DATA STABLE

 

 

 

 

 

IN

CHANGE

 

 

 

 

 

 

 

 

5-77

Page 143
Image 143
Intel 8080 manual 85o-·-···T, +--~~~TL~~~EEt~~~P-.±, Capacitance T a = 25C, f = 1MHz, Conditions of Test