SPRS292A − OCTOBER 2005 − REVISED NOVEMBER 2005

SYNCHRONOUS-BURST MEMORY TIMING

timing requirements for synchronous-burst SRAM cycles

(see Figure 29)

 

 

 

 

 

 

GDPA-167

 

 

 

 

 

ZDPA−167

 

NO.

 

 

 

−200

 

UNIT

 

 

 

 

−250

 

 

 

 

 

 

MIN

MAX

 

 

 

 

 

 

 

 

6

tsu(EDV-EKOH)

Setup time, read EDx valid before ECLKOUT high

 

1.5

 

ns

7

th(EKOH-EDV)

Hold time, read EDx valid after ECLKOUT high

 

2.5

 

ns

The SBSRAM interface takes advantage of the internal burst counter in the SBSRAM. Accesses default to incrementing 4-word bursts, but random bursts and decrementing bursts are done by interrupting bursts in progress. All burst types can sustain continuous data flow.

switching characteristics over recommended operating conditions for synchronous-burst SRAM cycles†‡ (see Figure 29 and Figure 30)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GDPA-167

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZDPA−167

 

NO.

 

PARAMETER

−200

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MIN

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

td(EKOH-CEV)

Delay time, ECLKOUT high to

 

 

 

 

 

valid

1.2

7

ns

CEx

 

 

2

td(EKOH-BEV)

Delay time, ECLKOUT high to

 

 

 

 

 

valid

 

7

ns

BEx

 

 

 

3

td(EKOH-BEIV)

Delay time, ECLKOUT high to

 

 

 

 

 

invalid

1.2

 

ns

BEx

 

 

 

4

td(EKOH-EAV)

Delay time, ECLKOUT high to EAx valid

 

7

ns

5

td(EKOH-EAIV)

Delay time, ECLKOUT high to EAx invalid

1.2

 

ns

8

td(EKOH-ADSV)

Delay time, ECLKOUT high to

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

7

ns

 

 

 

 

 

ARE/SDCAS/SSADS valid

9

td(EKOH-OEV)

Delay time, ECLKOUT high to,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

7

ns

 

 

 

AOE/SDRAS/SSOE valid

10

td(EKOH-EDV)

Delay time, ECLKOUT high to

 

 

 

 

valid

 

7

ns

EDx

 

11

td(EKOH-EDIV)

Delay time, ECLKOUT high to

 

 

 

 

invalid

1.2

 

ns

EDx

 

12

td(EKOH-WEV)

Delay time, ECLKOUT high to

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

7

ns

AWE/SDWE/SSWE valid

The SBSRAM interface takes advantage of the internal burst counter in the SBSRAM. Accesses default to incrementing 4-word bursts, but random bursts and decrementing bursts are done by interrupting bursts in progress. All burst types can sustain continuous data flow.

ARE/SDCAS/SSADS, AOE/SDRAS/SSOE, and AWE/SDWE/SSWE operate as SSADS, SSOE, and SSWE, respectively, during SBSRAM accesses.

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Motorola TMS320C6711D warranty SYNCHRONOUS-BURST Memory Timing, Timing requirements for synchronous-burst Sram cycles†