Texas Instruments TMS380C26 Memory bus timing Dram refresh timing, MADL0±MADL7 Mras, 73a

Models: TMS380C26

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TMS380C26

NETWORK COMMPROCESSOR

SPWS010A±APRIL 1992±REVISED MARCH 1993

PARAMETER MEASUREMENT INFORMATION

memory bus timing: DRAM refresh timing

tM is the cycle time of one-eighth of a local memory cycle (31.25 ns minimum)

NO.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

MIN

MAX

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup time of row address on MADL0±MADL7, MAXPH, and MAXPL before

 

 

no longer

 

 

 

15

MRAS

1.5tM ±11.5

 

ns

high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16

Hold time of row address on MADL0±MADL7, MAXPH, and MAXPL after

 

 

no longer high

tM ± 6.5

 

ns

MRAS

 

18

Pulse duration of

 

 

 

low

4.5tM ± 9

 

ns

MRAS

 

19

Pulse duration of

 

 

 

 

high

3.5tM ± 9

 

ns

MRAS

 

73a

Setup time of

 

 

 

 

low before

 

 

 

 

no longer high

1.5tM ±11.5

 

ns

MCAS

MRAS

 

73b

Hold time of

 

 

 

 

low after

 

 

 

 

low

4.5tM ± 6.5

 

ns

MCAS

MRAS

 

73c

Setup time of MREF high before

 

 

 

 

no longer high

tM ±14

 

ns

MCAS

 

73d

Hold time of MREF high after

 

 

 

 

high

tM ±9

 

ns

MCAS

 

MADL0±MADL7

MRAS

73a

MCAS

MREF

Refresh

Address

Address

 

16

 

15

19

 

18

73b

73c

73d

Figure 17. Memory Bus Timing: DRAM Refresh Cycle

52

POST OFFICE BOX 1443 HOUSTON, TEXAS

 

77251±1443

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Texas Instruments TMS380C26 specifications Memory bus timing Dram refresh timing, MADL0±MADL7 Mras, 73a, Mcas Mref