SM320F2812-HT
www.ti.com
SGUS062A–JUNE 2009 –REVISED APRIL 2010
6.31 Flash Timing
6.31.1 Recommended Operating Conditions(4)
MIN NOM MAX UNIT
NfFlash endurance for the array (Write/erase cycles) 0°C to 85°C 100 1000 cycles
Maximum One-Time Programmable (OTP) endurance for the array (Write
NOTP 0°C to 85°C 1 write
cycles)
(4) Flash Timing Endurance is the minimum number of write/erase or write cycles specified over a programming temperature range of 0°C
to 85°C. Flash may be read over the operating temperature range of the device.
Table 6-62. Flash Parameters at 150-MHz SYSCLKOUT(1) (2)
PARAMETER MIN TYP MAX UNIT
16-Bit Word 35 ms
Program 8K Sector 170 ms
Time 16K Sector 320 ms
8K Sector 10 s
Erase Time 16K Sector 11 s
Erase 75 mA
IDD3VFLP VDD3VFL current consumption during the Erase/Program cycle Program 35 mA
IDDP VDD current consumption during Erase/Program cycle 140 mA
IDDIOP VDDIO current consumption during Erase/Program cycle 20 mA
(1) Typical parameters as seen at room temperature using flash API V1 including function call overhead.
(2) Not production tested.
Table 6-63. Flash/OTP Access Timing(1) (2)
PARAMETER MIN TYP MAX UNIT
ta(fp) Paged Flash access time 36 ns
ta(fr) Random Flash access time 36 ns
ta(OTP) OTP access time 60 ns
(1) For 150 MHz, PAGE WS = 5 and RANDOM WS = 5
For 135 MHz, PAGE WS = 4 and RANDOM WS = 4
(2) Not production tested.
Table 6-64. Minimum Required Wait-States at Different Frequencies(1)
SYSCLKOUT (MHz) SYSCLKOUT (ns) PAGE WAIT-STATE(2) RANDOM WAIT STATE(2) (3)
150 6.67 5 5
120 8.33 4 4
100 10 3 3
75 13.33 2 2
50 20 1 1
30 33.33 1 1
25 40 0 1
15 66.67 0 1
(1) Not production tested.
(2) Formulas to compute page wait state and random wait state:
(3) Random wait state must be greater than or equal to 1
Copyright © 2009–2010, Texas Instruments Incorporated Electrical Specifications 149
Submit Documentation Feedback
Product Folder Link(s): SM320F2812-HT