Table 6.1 Absolute Maximum Stress Ratings1

Symbol

Parameter

Min

Max

Unit

Test Conditions

 

 

 

 

 

 

TSTG

Storage temperature

55

150

° C

VDD

Supply voltage

0.5

4.5

V

VIN

Input voltage

VSS 0.3

5.55

V

SCSI 5 V TolerANT pads

2

Latch-up current

± 150

mA

ILP

ESD

Electrostatic discharge

2 K

V

MIL-STD 883C,

 

 

 

 

 

Method 3015.7

 

 

 

 

 

 

1.Stresses beyond those listed above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions beyond those indicated in the Operating Conditions section of the manual is not implied.

2.2 V < VPIN < 8 V.

Table 6.2 Operating Conditions1

Symbol

Parameter

Min

Max

Unit

Test Conditions

 

 

 

 

 

 

VDD

Supply voltage

2.97

3.63

V

± 10%

IDD

Supply current (dynamic)

200 mA

mA

 

Supply current (static)

1 mA

mA

 

 

 

 

 

 

TA

Operating free air

0

70

° C

 

 

 

 

 

 

θ JA

Thermal resistance

25.1

° C/W

160 PQFP

 

(junction to ambient air)

 

34.7

 

169 PBGA

 

 

 

 

 

 

1. Conditions that exceed the operating limits may cause the device to function incorrectly.

Table 6.3

Input Capacitance

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Unit

Test Conditions

 

 

 

 

 

 

CI

Input capacitance of input pads

7

pF

CIO

Input capacitance of I/O pads

15

pF

6-2

Electrical Specifications

Page 240
Image 240
LSI 53C875A technical manual Absolute Maximum Stress Ratings1, Operating Conditions1, Input Capacitance