512 Kbyte Flash Module (S12XFTX512K4V2)
BookTitle, Rev. 2.4
Freescale Semiconductor 123
182kHz. In this case, the Flash program and erase algorithm timings are increased over the optimum target
by:
CAUTION
Program and erase command execution time will increase proportionally
with the period of FCLK. Because of the impact of clock synchronization
on the accuracy of the functional timings, programming or erasing the Flash
memory cannot be performed if the bus clock runs at less than 1 MHz.
Programming or erasing the Flash memory with FCLK < 150 kHz should
be avoided. Setting FCLKDIV to a value such that FCLK < 150 kHz can
destroy the Flash memory due to overstress. Setting FCLKDIV to a value
such that (1/FCLK+Tbus) < 5µs can result in incomplete programming or
erasure of the Flash memory cells.
If the FCLKDIV register is written, the FDIVLD bit is set automatically. If the FDIVLD bit is 0, the
FCLKDIV register has not been written since the last reset. If the FCLKDIV register has not been written
to, the Flash command loaded during a command write sequence will not execute and the ACCERR flag
in the FSTAT register will set.
200 182()200100×9%=