Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
940 Freescale Semiconductor
Table A-17. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
1 D External oscillator clock fNVMOSC 0.5 — 801
1Restrictions for oscillator in crystal mode apply.
MHz
2 D Bus frequency for programming or erase operations fNVMBUS 1 — MHz
3 D Operating frequency fNVMOP 150 200 kHz
4 P Single word programming time tswpgm 462
2Minimum programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
— 74.53
3Maximum erase and programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer
to formulae in Sections Section A.3.1.1, “Single Word ProgrammingSection A.3.1.4, “Mass Erase for guidance.
µs
5 D Flash burst programming consecutive word 4
4Burst programming operations are not applicable to EEPROM
tbwpgm 20.42—31
3µs
6 D Flash burst programming time for 64 words4tbrpgm 1331.22— 2027.53µs
7 P Sector erase time tera 205
5Minimum erase times are achieved under maximum NVM operating frequency, fNVMOP
.
— 26.73ms
8 P Mass erase time tmass 1005— 1333ms
9 D Blank check time Flash per block tcheck 116
6Minimum time, if first word in the array is not blank
— 655467
7Maximum time to complete check on an erased block
tcyc
10 D Blank check time EEPROM per block tcheck 116— 20587tcyc