Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
926 Freescale Semiconductor
A.1.9 I/O Characteristics

This section describes the characteristics of all I/O pins except EXTAL, XTAL,XFC,TEST and supply

pins.

Table A-6. 3.3-V I/O Characteristics

Conditions are 3.15 V < VDD35 < 3.6 V temperature from –40°C to +140°C, unless otherwise noted
I/O Characteristics for all I/O pins except EXTAL, XTAL,XFC,TEST and supply pins.
Num C Rating Symbol Min Typ Max Unit
1 P Input high voltage VIH 0.65*VDD35 ——V
T Input high voltage VIH ——V
DD35 + 0.3 V
2 P Input low voltage VIL — 0.35*VDD35 V
T Input low voltage VIL VSS35 – 0.3 V
3 C Input hysteresis VHYS 250 mV
4 P Input leakage current (pins in high impedance input
mode)1
Vin = VDD35 or VSS35
1Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8 C to 12 C in the temperature range from 50°C to 125°C.
Iin –1 1 µA
5 C Output high voltage (pins in output mode)
Partial drive IOH = –0.75 mA
VOH VDD35 – 0.4 V
6 P Output high voltage (pins in output mode)
Full drive IOH = –4 mA
VOH VDD35 – 0.4 V
7 C Output low voltage (pins in output mode)
Partial Drive IOL = +0.9 mA
VOL 0.4 V
8 P Output low voltage (pins in output mode)
Full Drive IOL = +4.75 mA
VOL 0.4 V
9 P Internal pull up device current, tested at VIL max. IPUL –60 µA
10 C Internal pull up device current, tested at VIH min. IPUH -6 - µA
11 P Internal pull down device current, tested at VIH min. IPDH ——60µA
12 C Internal pull down device current, tested at VIL max. IPDL 6—µA
13 D Input capacitance Cin —6—pF
14 T Injection current2
Single pin limit
Total device limit, sum of all injected currents
2Refer to Section A.1.4, “Current Injection” for more details
IICS
IICP
–2.5
–25
2.5
25
mA
15 P Port H, J, P interrupt input pulse filtered3
3Parameter only applies in stop or pseudo stop mode.
tPULSE —— 3µs
16 P Port H, J, P interrupt input pulse passed3tPULSE 10 µs