Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
922 Freescale Semiconductor
A.1.6 ESD Protection and Latch-up Immunity

All ESD testing is in conformity with CDF-AEC-Q100 stress test qualification for automotive grade

integrated circuits. During the device qualification ESD stresses were performed for the Human Body

Model (HBM) and the Charge Device Model.

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device

specification. Complete DC parametric and functional testing is performed per the applicable device

specification at room temperature followed by hot temperature, unless specified otherwise in the device

specification.

Table A-2. ESD and Latch-up Test Conditions

Model Description Symbol Value Unit
Human Body Series resistance R1 1500 Ohm
Storage capacitance C 100 pF
Number of pulse per pin
Positive
Negative
3
3
Latch-up Minimum input voltage limit –2.5 V
Maximum input voltage limit 7.5 V

Table A-3. ESD and Latch-Up Protection Characteristics

Num C Rating Symbol Min Max Unit
1 C Human Body Model (HBM) VHBM 2000 — V
2 C Charge Device Model (CDM) VCDM 500 — V
3 C Latch-up current at TA = 125°C
Positive
Negative
ILAT
+100
–100
mA
4 C Latch-up current at TA = 27°C
Positive
Negative
ILAT
+200
–200
mA