Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
Freescale Semiconductor 941
A.3.2 NVM Reliability

The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process

monitors and burn-in to screen early life failures. The program/erase cycle count on the sector is

incremented every time a sector or mass erase event is executed

Table A-18. NVM Reliability Characteristics1
1TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
Flash Reliability Characteristics
1 C Data retention after 10,000 program/erase cycles at an
average junction temperature of TJavg 85°C
tFLRET 15 1002
2Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618.
— Years
2 C Data retention with <100 program/erase cycles at an
average junction temperature TJavg 85°C
20 1002
3 C Number of program/erase cycles
(–40°C TJ 0°C)
nFL 10,000 — Cycles
4 C Number of program/erase cycles
(0°C TJ 140°C)
10,000 100,0003
3Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to
Engineering Bulletin EB619.
EEPROM Reliability Characteristics
5 C Data retention after up to 100,000 program/erase cycles
at an average junction temperature of TJavg 85°C
tEEPRET 15 1002— Years
6 C Data retention with <100 program/erase cycles at an
average junction temperature TJavg 85°C
20 1002
7 C Number of program/erase cycles
(–40°C TJ 0°C)
nEEP 10,000 — Cycles
8 C Number of program/erase cycles
(0°C < TJ140°C)
100,000 300,0003