Freescale Semiconductor MC9S12XDP512 T able A-30. Example 2b: Emulation Expanded Mode Timing V

Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
Freescale Semiconductor 963
Table A-30. Example 2b: Emulation Expanded Mode Timing VDD35 = 5.0 V (EWAITE = 0)
No. C Characteristic1
1Typical supply and silicon, room temperature only
Symbol
1 Stretch
Cycle
2 Stretch
Cycles
3 Stretch
Cycles Unit
Min Max Min Max Min Max
— — Internal cycle time tcyc 25 25 25 25 25 25 ns
1 — Cycle time tcyce 50 ∞75 ∞100 ∞ns
2 D Pulse width, E high PWEH 11.5 14 11.5 14 11.5 14 ns
3 D E falling to sampling E rising tEFSR 35 39.5 60 64.5 85 89.5 ns
4 D Address delay time tAD —5—5—5ns
5 D Address hold time tAH 0—0—0—ns
6 D IVD delay time2
2Includes also ACCx, IQSTATx
tIVDD — 4.5 — 4.5 — 4.5 ns
7 D IVD hold time2tIVDH 0—0—0—ns
8 D Read data setup time tDSR 12 — 12 — 12 — ns
9 D Read data hold time tDHR 0—0—0—ns
10 D Write data delay time tDDW —5—5—5ns
11 D Write data hold time tDHW 0—0—0—ns
12 D Read/write data delay time3
3Includes LSTRB
tRWD –1 5 –1 5 –1 5 ns