Table 7-16. DDR3 and DDR3L Signal DC Specifications (Sheet 2 of 2)

Symbol

Parameter

Min

Typ

Max

Units Notes1

VOL

Output Low Voltage

 

(VCCD/ 2)* (RON /(RON+RVTT_TERM))

 

V

2, 7

VOH

Output High Voltage

 

VCCD- ((VCCD / 2)* (RON/

 

V

2, 5, 7

 

 

 

(RON+RVTT_TERM))

 

 

 

Reference Clock Signal

 

 

 

 

 

 

 

 

 

 

 

 

RON

DDR3 Clock Buffer On

21

 

31

Ω

6

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

Command Signals

 

 

 

 

 

 

 

 

 

 

 

 

RON

DDR3 Command Buffer On

16

 

24

Ω

6

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

RON

DDR3 Reset Buffer On

25

 

75

Ω

6

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

VOL_CMOS1.5v

Output Low Voltage, Signals

 

 

0.2*VCCD

V

1,2

 

DDR_RESET_ C{01/23}_N

 

 

 

 

 

 

 

 

 

 

 

 

VOH_CMOS1.5v

Output High Voltage, Signals

0.9*VCCD

 

 

V

1,2

 

DDR_RESET_ C{01/23}_N

 

 

 

 

 

 

 

 

 

 

 

 

IIL_CMOS1.5v

Input Leakage Current

-100

 

+100

μA

1,2

Control Signals

 

 

 

 

 

 

 

 

 

 

 

 

 

RON

DDR3 Control Buffer On

21

 

31

Ω

6

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

DDR01_RCOMP[0

COMP Resistance

128.7

130

131.3

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR01_RCOMP[1

COMP Resistance

25.839

26.1

26.361

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR01_RCOMP[2

COMP Resistance

198

200

202

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR23_RCOMP[0

COMP Resistance

128.7

130

131.3

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR23_RCOMP[1

COMP Resistance

25.839

26.1

26.361

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR23_RCOMP[2

COMP Resistance

198

200

202

Ω

9,12

]

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR3 Miscellaneous Signals

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input Low Voltage

 

 

0.55*VCC

V

2, 3,

 

DRAM_PWR_OK_C{01/23}

 

 

D - 0.2

 

11, 13

 

 

 

 

 

 

 

VIH

Input High Voltage

0.55*VCC

 

 

V

2, 4, 5,

 

DRAM_PWR_OK_C{01/23}

D + 0.3

 

 

 

11, 13

 

 

 

 

 

 

 

Notes:

1.Unless otherwise noted, all specifications in this table apply to all processor frequencies.

2.The voltage rail VCCD which will be set to 1.50 V or 1.35 V nominal depending on the voltage of all DIMMs connected to the processor.

3.VIL is the maximum voltage level at a receiving agent that will be interpreted as a logical low value.

4.VIH is the minimum voltage level at a receiving agent that will be interpreted as a logical high value.

5.VIH and VOH may experience excursions above VCCD. However, input signal drivers must comply with the signal quality specifications. Refer to Section 7.9.

6.This is the pull down driver resistance. Refer to processor signal integrity models for I/V characteristics. Reset drive does not have a termination.

7.RVTT_TERM is the termination on the DIMM and not controlled by the processor. Please refer to the applicable DIMM datasheet.

8.The minimum and maximum values for these signals are programmable by BIOS to one of the pairs.

9.COMP resistance must be provided on the system board with 1% resistors. See the applicable platform design guide for implementation details. DDR01_RCOMP[2:0] and DDR23_RCOMP[2:0] resistors are terminated to VSS.

10.Input leakage current is specified for all DDR3 signals.

11.DRAM_PWR_OK_C{01/23} must have a maximum of 30 ns rise or fall time over VCCD * 0.55 +300 mV and -200 mV and the edge must be monotonic.

12.The DDR01/23_RCOMP error tolerance is ± 15% from the compensated value.

Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families

177

Datasheet Volume One

 

Page 177
Image 177
Intel E5-4600 DDR3 and DDR3L Signal DC Specifications Sheet 2, Reference Clock Signal, Command Signals, Control Signals