Chapter 18 Flash EEPROM

18-1-2 Differences between Mask ROM version and EPROM version

Table 18-1-1 shows differences between 8-bit microcontroller MN101C77C (Mask ROM version), MN101CF77G (EPROM version) .

Table 18-1-1 Differences between Mask ROM version and EPROM version

 

MN101C77C

MN101CF77G

 

(Mask ROM Version)

(Flash EEPROM Version)

 

 

 

Operating temperature

- 40 oC to +85oC

- 40 oC to +85 oC

 

2.5 V to 3.6 V (100ns / 20MHz)

2.7 V to 3.6 V (100ns / 20MHz)

Operating Voltage

2.1 V to 3.6 V (200ns / 10MHz)

 

 

1.8 V to 3.6 V (500ns / 4MHz)

 

 

 

 

Pin

Pin No. 5: NC

Pin No. 5: VPP *1

 

 

 

 

Current consumption of Flash EEPROM versions are larger than

Current consumption

that of the Mask ROM versions, as it features voltage boosting. The

 

difference is larger in SLOW and HALT mode.

 

 

Oscillation characteristics

Matching evaluation of each version is necessary when these

versions are rotated for mass production.

 

 

 

Noise characteristics

Noise evaluation of each version is necessary when these versions

are rotated for mass production.

 

 

 

 

 

 

*1 Apply +5 V during Flash EEPROM programming, and apply the same (VDD) potential during other operations.

XVIII-4 Overview

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Panasonic MN101C77C, F77G user manual Differences between Mask ROM version and Eprom version