CHAPTER 3 SYSTEM CONTROLLER
214 Preliminary User’s Manual S15543EJ1V0UM
Table 3-7. Command Sequence
(a) Program Command Sequence (4 Write Cycles)
1st Write 2nd Write 3rd Write 4th Write 5th Write 6th Write
A 1FC0_2AA8H A 1FC0_1554H A 1FC0_2AA8H A PA* A A
D AAAA_AAAAH D 5555_5555H D A0A0_A0A0H D PD* D D
(b) Chip Erase Command Sequence (6 Write Cycles)
1st Write 2nd Write 3rd Write 4th Write 5th Write 6th Write
A 1FC0_2AA8H A 1FC0_1554H A 1FC0_2AA8H A 1FC0_2AA8H A 1FC0_1554H A 1FC0_2AA8H
D AAAA_AAAAH D 5555_5555H D 8080_8080H D AAAA_AAAAH D 5555_5555H D 1010_1010H
(c) Sector Erase Command Sequence (6 Write Cycles)
1st Write 2nd Write 3rd Write 4th Write 5th Write 6th Write
A 1FC0_2AA8H A 1FC0_1554H A 1FC0_2AA8H A 1FC0_2AA8H A 1FC0_1554H A EA*
D AAAA_AAAAH D 5555_5555H D 8080_8080H D AAAA_AAAAH D 5555_5555H D 3030_3030H
Remark A = memory write address
D = memory write data
PA = address of flash location to be programmed.
PD = data to be programmed at location PA.
EA = block address of flash location to be erased.
In case of Flash memory programming, please consider following system factors:
(1) Read cycle can’t interrupt these write commands. Therefore, it is impossible for the
µ
PD98502 to program Flash
memory with fetching from Flash memory.
(2) These write commands for Flash memory will be change on following system factors.
• Flash manufacturer company: Write sequences are differing among each company
• Endian mode (there are 3 system endian modes; Little endian, Big endian with data swap mode, and Big
endian with address swap mode)
• Flash data BUS size of Flash memory (ordinary Flash memory has both 8- and 16-bit BUS modes)
• Flash data BUS size of system controller (8, 16, 32 bits)
(3) Please make SMD and SMA signal outputs the same for write sequences.