Memory Controller
MPC8260 PowerQUICC II Family Reference Manual, Rev. 2
11-50 Freescale Semiconductor
Because AP alternates with A[7] of the row lines, set PSDMR[SDA10] = 011. This outputs A[7] on the
SDA10 line during the ACTIVATE command and AP during READ/WRITE and CBR commands.
Table11-25 shows the register configuration. Not shown are PSRT and MPTPR, which should be
programmed according to the device refresh requirements:
11.4.13 SDRAM Configuration Example (Bank-Based Interleaving)
Consider the following SDRAM organization:
Eight 64 Mbit devices, each organized as 8M x 8bits
Each device has four internal banks, 12 rows, and 9 columns
For bank-based Interleaving, this means that the address bus should be partitioned as shown in
Table11-26..
The following parameters can be extracted:
•PSDMR[PBI] = 0
•ORx[BPD] = 01—4 internal banks
•ORx[ROWST] = 0100—row starts at A[8]
•ORx[NUMR] = 011—there are 12 row lines
Table11-25. Register Settings (Page-Based Interleaving)
Register Settings
BR
x
BABase address
PS00 = 64-bit por t size
DECC00
WP0
MS010 = SDRAM-60x bus
EMEMC0
ATOM0 0
DR0
V1
OR
x
AM1111_1100_0000
LSDAM00000
BPD01
ROWST0110
NUMR011
PMSEL0
IBID0
PSDMR PBI1
RFEN1
OP000
SDAM011
BSMA010
SDA10011
RFRC from device data sheet
PRETOACT from device data sheet
ACTTOROW from device data sheet
BL0
LDOTOPRE from device data sheet
WRC from device data sheet
EAMUX0
BUFCMD0
CL from device data sheet
Table11-26. 60x Address Bus Partition
A[0–5] A[6–7] A[8–19] A[20–28] A[29–31]
msb of start address Internal bank select Row Column lsb