Memory and PCMCIA Control Module

10.2.1DRAM Configuration Register (MDCNFG)

MDCNFG is a read/write register and contains control bits for configuring the DRAM. All DRAM banks must be implemented with the same type of DRAM devices. Question marks indicate that the values are unknown at reset.

Bit

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read

DRI14

DRI13

DRI12

DRI11

DRI10

DRI9

DRI8

DRI7

DRI6

DRI5

DRI4

DRI3

DRI2

DRI1

DRI0

TDL1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reset

?

?

?

?

?

?

?

?

?

?

?

?

?

?

?

?

-?

Bit

15

14

13

12

11

10

9

8

7

6

5

4

3

2

1

0

Read

TDL0

TRASR3

TRASR2

TRASR1

TRASR0

TRP3

TRP2

TRP1

TRP0

CDB2

DRAC1

DRAC0

DE3

DE2

DE1

DE0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reset

?

?

?

?

?

?

?

?

?

?

?

?

0

0

0

0

Bit

Name

Description

3..0

DE<3:0>

DRAM enable bank 3-0.

 

 

For each DRAM bank, there is an enable bit. Reads or writes to a disabled DRAM

 

 

bank trigger a single CBR refresh cycle to all banks. When all banks are disabled,

 

 

the refresh counter is disabled.

 

 

0 – DRAM bank disabled.

 

 

1 – DRAM bank enabled.

 

 

These bits are cleared by hardware reset.

 

 

 

5..4

DRAC<1:0>

DRAM row address bit count.

 

 

00 – 9 row address bits. (Select this for support of 9x9 and 9x8 DRAMs.)

 

 

01 – 10 row address bits. (Select this for support of 10x10, 10x9, and 10x8 DRAMs.)

 

 

10 – 11 row address bits. (Select this for support of 11x11, 11x10, 11x9, and 11x8 DRAMs.)

 

 

11 – 12 row address bits. (Select this for support of 12x10, 12x9, and 12x8 DRAMs.)

 

 

 

6

CDB2

Clock divide by 2.

 

 

0 – CAS waveform shift register (MDCAS0, 1, 2) shifted every CPU clock.

 

 

1 – CAS waveform shift register shifted every memory clock. (CPU clock divided by 2.)

 

 

 

10..7

TRP<3:0>

RAS precharge.

 

 

Number of memory clocks nRAS deasserted before next assertion. Between any two

 

 

DRAM accesses, nRAS is high for TRP+1 or 2 memory cycles (whichever is greater).

 

 

Between a DRAM access and a refresh, both nRAS and nCAS are deasserted for

 

 

TRP+1 or 2 memory cycles (whichever is greater).

 

 

 

14..11

TRASR<3:0>

RAS assertion during CBR.

 

 

Number of memory clocks (minus one) nRAS asserted during CAS before RAS

 

 

refresh.

 

 

 

16..15

TDL<1:0>

Data input latch after CAS deassertion.

 

 

00 – Read data is latched coincident with the deassertion of nCAS.

 

 

01 – Read data is latched one CPU clock cycle after the deassertion of nCAS (useful for

 

 

EDOs).

 

 

10 – 2 clocks later.

 

 

11 – 3 clocks later.

 

 

 

SA-1100 Developer’s Manual

10-7

Page 121
Image 121
Intel SA-1100 manual Dram Configuration Register Mdcnfg, CDB2