Intel SA-1100 Contents of DRAM register fields:

SA-1100 Developer’s Manual 10-17
Memory and PCMCIA Control Module
Figure10-4 shows the rate of the shift registers during DRAM nCAS timing for burst-of-eight
transactions.
Figure 10-4. DRAM Burst-of-Eight Transactions
A4778-01
Memory Clock
ADDR
Input Data
Latch Input Data (internal):
Reads:
TRP
nRAS
nOE
Writes:
Write Data
nWE
nCAS
COL
D0
D1 D2 D3 D4 D5 D6 D7
COL+4 COL+8 COL+12 COL+16 COL+20 COL+24 COL+28
D0 D1 D2 D3 D4 D5 D6 D7
ROW
Contents of DRAM register fields:
MDCAS1 = 11 0001 1000 1100 (binary) MDCAS0 = 0110 0011 0001 1000 1100 0110 0000 0111 (binary)
firstlast time
MDCNFG:TRP = 4 MDCNFG:CDB2 = 1 TDL = 00
Contents of DRAM register fields:
MDCNFG:TRP=4 MDCAS0= 0110 0011 0001 1000 1100 0110 0000 0111(binary)
MDCAS1=11 0001 1000 1100(binary)
MDCNFG:CDB2=1 TDL=00
time first
last