Memory and PCMCIA Control Module

10.3Dynamic Interface Operation

This section describes the dynamic memory interface.

10.3.1DRAM Overview

The dynamic memory interface supports up to four banks of identical size and type dynamic memory on a 32-bit bus. Initialization software must set up the memory interface configuration registers with the DRAM size, type, number of row address bits, nCAS waveforms, and timing parameters. The SA-1100 generates accesses of 1–8 words.

Table 10-5shows some of the supported DRAM configurations.

Table 10-5. DRAM Memory Size Options

Bank Size

 

 

DRAM

 

Number

Row bits x

Max Memory

Total

Configuration

Chip Size

Chips /

(4 Banks,

Number

(Mbyte/Bank)

Col. Bits

(Words x Bits)

 

Bank

32-bit Bus)

of Chips

 

 

 

 

 

 

 

 

 

 

 

1 Mbyte

256

K x 16

4 Mbit

2

9 x 9

4 Mbyte

8

 

 

 

 

 

 

 

 

2 Mbyte

512

K x 8

4 Mbit

4

10 x 9

8 Mbyte

16

 

 

 

 

 

 

 

 

2 Mbyte

512

K x 32

16Mbit

1

10 x 9

8 Mbyte

4

 

 

 

 

 

 

 

 

4 Mbyte

1

M x 4

4 Mbit

8

10 x 10

16 Mbyte

32

 

 

 

 

 

 

 

 

4 Mbyte

1

M x 16

16 Mbit

2

10 x 10, 12 x 8

16 Mbyte

8

 

 

 

 

 

 

 

 

8 Mbyte

2

M x 8

16 Mbit

4

11 x 10, 12 x 9

32 Mbyte

16

 

 

 

 

 

 

 

 

16 Mbyte

4

M x 16

64 Mbit

2

12 x 10

64 Mbyte

8

 

 

 

 

 

 

 

 

 

Table 10-6shows the DRAM row and column address multiplexing. For each row address size specified, column address sizes of 11, 10, 9, and 8 are supported wherever the row address is larger than or the same size as the column address (12 rows x 11 columns are not supported). Connecting address lines to the DRAM chips as shown allows the proper addressing without having to specify the column address size.

.

Table 10-6. DRAM Row/Column Address Multiplexing

Number of Row

DRAM Address Pins at RAS Time

 

DRAM Address Pins at CAS Time

 

Address Bits

 

 

 

 

 

 

 

 

 

 

(as specified in

DRA11

DRA10

DRA9

DRA8-0

DRA11

DRA10

DRA9

DRA8

 

DRA7-0

MDCNFG:DRAC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12 bits

IA21

IA20

IA19

IA18-10

x

x

IA23

IA22

 

IA9-2

 

 

 

 

 

 

 

 

 

 

 

 

DRAM:

11 bits

x

IA20

IA19

IA18-10

x

IA23

IA22

IA21

 

IA9-2

 

 

 

 

 

 

 

 

 

 

 

10 bits

x

x

IA19

IA18-10

x

x

IA21

IA20

 

IA9-2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

9 bits

x

x

x

IA18-10

x

x

x

IA19

 

IA9-2

 

 

 

 

 

 

 

 

 

 

 

 

DRAx = SA-1100 DRAM interface address pin, A(21:10) = DRA(11:0)

IAx = Internal address bit

Note: At RAS time, all address pins, A(25:0), are driven with the internal address that corresponds to the pin of the same number. For example, a DRAM with 13 bits of row address can be accommodated by hooking up the 13th row address line of the DRAM to SA-1100 address pin A22. (MDCNFG:DRAC is a "don’t care".) The column address, in this case, will be limited to a maximum of 8 bits. In general, DRAMs that utilize fewer than 8 column address bits can be used, but there will be holes in the memory map due to no physical memory being addressed by the still significant internal address bit IA9.

10-14

SA-1100 Developer’s Manual

Page 128
Image 128
Intel SA-1100 Dynamic Interface Operation, Dram Overview, Dram Memory Size Options, Dram Row/Column Address Multiplexing