Toshiba H1 Series, TLCS-900, TMP92CZ26AXBG TMP92CZ26A , 92CZ26A-262

TMP92CZ26A
92CZ26A-262
Writing ECC to NAN D Flash
; ***** Write dummy data & ECC *****
;
ldw (ndfmcr0),5088h ; ECC circuit disable, data writ e mode
ldw (ndfdtr0),xxxxh ; Redundancy area data write
; Write to 207-206h ex address: > D79-64
ldw (ndfdtr1),xxxxh ; Redundancy area data write
; Write to 209-208h ex address: > D63-48
ldw (ndfdtr0),xxxxh ; Redundancy area data write
; Write to 20B-20Ahex address: > D47-32
ldw (ndfdtr1),xxxxh ; Redundancy area data write
; Write to 20D-20Chex address: > D31-16
ldw (ndfdtr0),xxxxh ; Redundancy area data write
; Write to 20F-20Ehex address: > D15-0
;
; The write operation is re peated four times to write 2112 bytes.
Executing pa ge program
; ***** Set auto page program*****
;
ldw (ndfmcr0),50A8h ; WE enable, CLE enable
ldw (ndfdtr0),0010h ; Auto page program command
ldw (ndfmcr0),5008h ; WE disable, CLE disable
;
; Wait set up time (from Busy to Ready)
; 1. Flag polling
; 2. Interrupt
In case of LB type NANDF, programming page size is normally each 2112
bytes and ECC calculation is pr ocess ed each 518 (512 ) b ytes. P lease tak e care
of programming flow. In details, refer the NANDF memor y specifications.
Reading status
; ***** Read status*****
;
ldw (ndfmcr0),50A8h ; WE enable, CLE enable
ldw (ndfdtr0),0070h ; Status read command
ldw (ndfmcr0),5008h ; WE disable, CLE disable
ldw xxxx,(ndfdtr0) ; Status read