II CORE BLOCK: BCU (Bus Control Unit)

DRAM Direct Interface

Outline of DRAM Interface

The BCU incorporates a DRAM direct interface that allows DRAM to be connected directly to areas 8 and 7 or areas 14 and 13. This interface supports the 2CAS method, so that column addresses can be set at between 8 and 11 bits.In addition, this interface supports a fast-page or an EDO-page mode (EDO DRAM directly connectable to areas) as well as random cycles. The refresh method (CAS-before-RAS refresh or self-refresh) and timing conditions (e.g., number of RAS/CAS cycles and number of precharge cycles) can be programmed using a control bit.

When selecting areas 8 and 7 or areas 14 and 13 to be used for DRAM, it depends on chip-enable settings using CEFUNC (D9) / DRAM timing set-up register (0x48130).

CEFUNC = "00": DRAM can be connected to areas 8 and 7 (default)

#CE8 and #CE7 function as #RAS0 and #RAS1, respectively. CEFUNC "00": DRAM can be connected to areas 14 and 13.

#CE14 and #CE13 function as #RAS2 and #RAS3, respectively.

Figure 4.27 shows a sample DRAM connection. Table 4.13 and Table 4.14 show examples of connectable DRAMs and typical configurations.

S1C33

 

4M DRAM

 

 

(256K x 16)

A[9:1]

 

A[8:0]

 

D[15:0]

 

I/O[15:0]

 

#RD #OE

#RASx(#CEx)* #RAS

#HCAS #HCAS

#LCAS #LCAS

#WE #WE

x: 14, 13, 8 or 7

Figure 4.27 Sample DRAM Connection

Table 4.13 Connectable DRAM Example

 

DRAM

Number of

Number of

Number of

Memory size

 

devices

Row bits

Column bits

 

 

 

 

 

 

 

 

 

1M

(64K x 16)

1

8

8

128K bytes

4M

(256K x 16)

1

9

9

512K bytes

16M (1M x 16)

1

12

8

2M bytes

Table 4.14 DRAM Configuration Example (areas 7 and 8 only)

 

Area 7

Area 8

Total memory size

1

I/O

DRAM (1M)

1M bits

(128K bytes)

2

I/O

DRAM (4M)

4M bits

(512K bytes)

3

I/O

DRAM (16M)

16M bits

(2M bytes)

4

DRAM (1M)

DRAM (1M)

2M bits

(256K bytes)

5

DRAM (4M)

DRAM (4M)

8M bits

(1M bytes)

6

DRAM (16M)

DRAM (16M)

32M bits

(4M bytes)

S1C33210 FUNCTION PART

EPSON

B-II-4-23