Epson S1C33210 manual 90

8 ELECTRICAL CHARACTERISTICS

Common characteristics

	(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85					° C)
Item		Symbol	Min.	Max.	Unit	∗
Address delay time		tAD	–	10	ns	1
#CEx delay time (1)		tCE1	–	10	ns
#CEx delay time (2)		tCE2	–	10	ns
Wait setup time		tWTS	17	–	ns
Wait hold time		tWTH	0	–	ns
Read signal delay time (1)		tRDD1		10	ns	2
Read data setup time		tRDS	15		ns
Read data hold time		tRDH	0		ns
Write signal delay time (1)		tWRD1		10	ns	3
Write data delay time (1)		tWDD1		10	ns
Write data delay time (2)		tWDD2	0	10	ns
Write data hold time		tWDH	0		ns

∗note 1) This applies to the #BSH and #BSL timings.

2)This applies to the #GAAS and #GARD timings.

3)This applies to the #GAAS timing.

SRAM read cycle

(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85° C)

Item	Symbol	Min.	Max.	Unit	∗
Read signal delay time (2)	tRDD2		10	ns
Read signal pulse width	tRDW	tCYC(0.5+WC)-10		ns
Read address access time (1)	tACC1		tCYC(1+WC)-25	ns
Chip enable access time (1)	tCEAC1		tCYC(1+WC)-25	ns
Read signal access time (1)	tRDAC1		tCYC(0.5+WC)-25	ns

SRAM write cycle

	(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85					° C)
Item		Symbol	Min.	Max.	Unit	∗
Write signal delay time (2)		tWRD2		10	ns
Write signal pulse width		tWRW	tCYC(1+WC)-10		ns

A-76 EPSON S1C33210 PRODUCT PART