Functional Description
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Intel® 82845 MCH for SDR Datasheet 109
The 845 chipset can be configured to support PC133 SDRAM.
5.2.1 Single Data Rate (SDR) SDRAM Interface Overview
The MCH integrates a system memory SDRAM controller with a 64-bit wide interface and twelve
system memory clock signals (each at 133 MHz). The MCH’s system memory buffers support
LVTTL (SDRAM) signaling at 133 MHz.
The MCH includes support for:
• Up to 3 GB of 133 MHz SDR SDRAM
• PC133 unbuffered 168 pin SDR SDRAM DIMMs
• Maximum of 3 DIMMs, single-sided and/or double-sided
• Configurable optional ECC
The two bank-select lines SBS[1:0] and the thirteen address lines (SMA[12:0]) allow the MCH to
support 64-bit wide DIMMs using 64 Mb, 128 Mb, 256 Mb, and 512 Mb SDRAM technologies.
While address lines SMA[9:0] determine the starting address for a burst, burst lengths are fixed at
four. Twelve chip selects SCS# lines allow a maximum of three rows of single-sided SDRAM
DIMMs and six rows of double-sided SDRAM DIMMs.
The MCH’s system memory controller targets CAS latencies of 2 and 3 clocks for SDRAM. The
MCH provides refresh functionality with a programmable rate (normal SDRAM rate is
1 refresh/15.6 us).
5.2.2 Memory Organization and Configur ation
In the following discussion the term row refers to a set of memory devices that are simultaneously
selected by a SCS# signal. The MCH supports a maximum of 6 rows of memory. For the purposes
of this discussion, a “side” of a DIMM is equivalent to a “row” of SDRAM devices.
Table 12. Supported DIMM Configurations
Density 64 Mbit 128 Mbit 256 Mbit 512 Mbit
Device
Width X8 X16 X8 X16 X8 X1 6 X8 X16
Single \
Double SS/DS SS/DS SS/DS SS/DS SS/DS SS/DS SS/DS SS/DS
168 pin
SDR
DIMMs
64 MB /
128 MB 32 MB /
64 MB 128 MB /
256 MB 64 MB /
128 MB 256 MB /
512 MB 128 MB /
256 MB 512 MB /
1024 MB 256 MB /
512 MB