Epson S1D13504 6 D.C. Characteristics

Page 34 Epson Research and Development
Vancouver Design Center
S1D13504 Hardware Functional Specification
X19A-A-002-18 Issue Date: 01/01/30
6 D.C. Characteristics
Table 6-1: Absolute Maximum Ratings
Symbol Parameter Rating Units
Core VDD Supply Voltage VSS - 0.3 to 4.6 V
IO VDD Supply Voltage VSS - 0.3 to 6.0 V
VIN Input Voltage VSS - 0.3 to IO VDD + 0.5 V
VOUT Output Voltage VSS - 0.3 to IO VDD + 0.5 V
TSTG Storage Temperature -65 to 150 ° C
TSOL Solder Temperature/Time 260 for 10 sec. max at lead ° C
Table 6-2: Recommended Operating Conditions
Symbol Parameter Condition Min Typ Max Units
Core VDD Supply Voltage VSS = 0 V 2.7 3.0/3.3 3.6 V
IO VDD Supply Voltage VSS = 0 V 2.7 3.0/3.3/5.0 5.5 V
VIN Input Voltage VSS IO VDD V
TOPR Operating Temperature -40 25 85 ° C
Table 6-3: Input Specifications
Symbol Parameter Condition Min Typ Max Units
VIL
Low Level Input Voltage
CMOS inputs IO VDD = 3.0 3.3
5.0
0.8
0.8
1.0
V
V
V
VIH
High Level Input Voltage
CMOS inputs IO VDD = 3.0 3.3
5.0
1.9
2.0
3.5
V
V
V
VT+
Positive-Going Threshold
CMOS Schmitt inputs IO VDD = 3.0 3.3
5.0
1.0
1.1
2.0
2.3
2.4
4.0
V
V
V
VT-
Negative-Going Threshold
CMOS Schmitt inputs IO VDD = 3.0 3.3
5.0
0.5
0.6
0.8
1.7
1.8
3.1
V
V
V
IIZ Input Leakage Current VDD = Max
VIH = IO VDD
VIL = VSS
-1 1 µA
CIN Input Pin Capacitance 10 pF
HRPD Pull-down Resistance VIN = VDD = 3.0
= 3.3
= 5.0
60
50
50
120
100
100
300
300
300
kΩ
kΩ
kΩ