Page 54

Epson Research and Development

Vancouver Design Center

7.3.5 EDO-DRAM Self-Refresh Timing

 

Stopped for

Restarted for

t1

suspend mode

active mode

 

 

Memory

 

 

Clock

t5

 

 

 

 

t2

 

RAS#

 

 

CAS#

 

 

t3

t4

 

Figure 7-11: EDO-DRAM Self-Refresh Timing

Table 7-11: EDO-DRAM Self-Refresh Timing

Symbol

Parameter

Min

Typ

Max

Units

 

 

 

 

 

 

t1

Memory clock period

25

 

 

ns

 

 

 

 

 

 

t2

RAS# to CAS# precharge time (REG[22h] bits [3:2] = 00)

1.45 t1

 

 

ns

 

 

 

 

 

RAS# to CAS# precharge time (REG[22h] bits [3:2] = 01 or 10)

0.45 t1

 

 

ns

 

 

 

 

 

 

 

 

 

t3

CAS# precharge time (REG[22h] bits [3:2] = 00)

2 t1

 

 

ns

 

 

 

 

 

CAS# precharge time (REG[22h] bits [3:2] = 01 or 10)

1 t1

 

 

ns

 

 

 

 

 

 

 

 

 

t4

CAS# setup time (REG[22h] bits [3:2] = 00 or 10)

0.45 t1 - 2

 

 

ns

 

 

 

 

 

CAS# setup time (REG[22h] bits [3:2] = 01)

1 t1 - 2

 

 

ns

 

 

 

 

 

 

 

 

 

 

RAS# precharge time (REG[22h] bits [3:2] = 00)

2 t1 - 1

 

 

ns

 

 

 

 

 

 

t5

RAS# precharge time (REG[22h] bits [3:2] = 01)

1.45 t1 - 1

 

 

ns

 

 

 

 

 

 

 

RAS# precharge time (REG[22h] bits [3:2] = 10)

1 t1 - 1

 

 

ns

 

 

 

 

 

 

S1D13504

Hardware Functional Specification

X19A-A-002-18

Issue Date: 01/01/30

Page 60
Image 60
Epson S1D13504 manual EDO-DRAM Self-Refresh Timing