Page 48 Epson Research and Development
Vancouver Design Center
S1D13504 Hardware Functional Specification
X19A-A-002-18 Issue Date: 01/01/30
Table 7-7: EDO DRAM Read Timing
Symbol Parameter Min Typ Max Units
t1 Memory clock period 25 ns
t2
Random read or write cycle time (REG[22h] bits [6:5] = 00) 5 t1 ns
Random read or write cycle time (REG[22h] bits [6:5] = 01) 4 t1 ns
Random read or write cycle time (REG[22h] bits [6:5] = 10) 3 t1 ns
t3
Row address setup time (REG[22h] bits [3:2] = 00) 2.45 t1 ns
Row address setup time (REG[22h] bits [3:2] = 01) 2 t1 ns
Row address setup time (REG[22h] bits [3:2] = 10) 1.45 t1 ns
t4 Row address hold time (REG[22h] bits [3:2] = 00 or 10) 0.45 t1 - 1 ns
Row address hold time (REG[22h] bits [3:2] = 01) t1 - 1 ns
t5 Column address setup time 0.45 t1 - 1 ns
t6 Column address hold time 0.45 t1 - 1 ns
t7 CAS# pulse width 0.45 t1 0.55 t1 + 1 ns
t8 CAS# precharge time 0.45 t1 - 1 0.55 t1 ns
t9 RAS# hold time 1 t1 ns
t10
RAS# precharge time (REG[22h] bits [3:2] = 00) 2 t1 - 1 ns
RAS# precharge time (REG[22h] bits [3:2] = 01) 1.45 t1 - 1 ns
RAS# precharge time (REG[22h] bits [3:2] = 10) 1 t1 - 1 ns
t11
RAS# to CAS# delay time
(REG[22h] bit 4 = 0 and bits [3:2] = 00 or 10) 2 t1 - 2 2 t1 ns
RAS# to CAS# delay time
(REG[22h] bit 4 = 1 and bits [3:2] = 00 or 10) 1 t1 - 2 1 t1 ns
RAS# to CAS# delay time (REG[22h] bits [3:2] = 01) 1.45 t1 - 2 1.55 t1 ns
t12
Access time from RAS#
(REG[22h] bit 4 = 0 and bits [3:2] = 00 or 10) 3 t1 - 11 ns
Access time from RAS#
(REG[22h] bit 4 = 1 and bits [3:2] = 00 or 10) 2 t1 - 11 ns
Access time from RAS# (REG[22h] bits [3:2] = 01) 2.45 t1 - 12 ns
t13 Access time from CAS# t1 - 10 ns
t14 Access time from CAS# precharge, column address 1.45 t1 - 6 ns
t15 Read Data hold after CAS# low 2 ns
t16 Read Data turn-off delay from RAS# 2 ns