
VI SDRAM CONTROLLER BLOCK: SDRAM INTERFACE
Figure 2.12 shows an example of a timing chart in cases where the row address is varied during burst read.
BCLK
Command | NOP PRE | NOP ACTV | NOP | READ NOP | PRE | NOP | ACTV NOP | READ NOP |
SDCKE | H |
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#SDCEx |
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#SDRAS |
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#SDCAS |
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#SDWE |
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SDBA[1:0] | BA | BA |
| BA | BA |
| BA | BA |
SDA[10] |
| ROW1 |
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| ROW2 |
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SDA[12:11, 9:0] |
| ROW1 |
| COLn |
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| ROW2 | COL0 |
LDQM/HDQM |
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DQ[15:0] |
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| D(n) | D(n+1) | D(n+2) |
| D(0) D(1) D(2) |
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| tRP | tRCD | CAS latency |
| tRP | tRCD | CAS latency |
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| = 2 |
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| = 2 |
tRAS
Figure 2.12 Changing Row Address During Burst Read
Single Read/Single Write
If the burst length is set to "1" (SDRBL[1:0] = "00"), the SDRAM controller reads data from the SDRAM in a single operation.
When writing to the SDRAM, data are always written in a single operation, no matter what burst length is selected.
BCLK
Command | NOP PRE | NOP ACTV | NOP | READ NOP | PRE | NOP | ACTV NOP | WRIT |
SDCKE | H |
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#SDCEx |
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#SDRAS |
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#SDCAS |
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#SDWE |
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SDBA[1:0] | BA1 | BA1 |
| BA1 | BA2 |
| BA2 | BA2 |
SDA[10] |
| ROW1 |
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| ROW2 |
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SDA[12:11, 9:0] |
| ROW1 |
| COL1 |
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| ROW2 | COL2 |
LDQM/HDQM |
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DQ[15:0] |
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| D(1) |
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| tRP | tRCD | CAS latency | tRP | tRCD |
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Figure 2.13 Single Read to Single Write (different page)
BCLK
Command | NOP PRE | NOP ACTV | NOP | READ | NOP | WRIT NOP | PRE NOP |
SDCKE | H |
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#SDCEx |
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#SDRAS |
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#SDCAS |
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#SDWE |
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SDBA[1:0] | BA | BA |
| BA |
| BA | BA |
SDA[10] |
| ROW1 |
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SDA[12:11, 9:0] |
| ROW1 |
| COLn |
| COLm |
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LDQM/HDQM |
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DQ[15:0] |
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| D(n) D(n+1) D(n+2) | D(m) |
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| tRP | tRCD | CAS latency |
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Figure 2.14 Burst Read to Single Write (same page)
EPSON | S1C33L03 FUNCTION PART |