8 ELECTRICAL CHARACTERISTICS

3) 2.0 V single power source

(Unless otherwise specified: VDDE=VDD=2V±0.2V, VSS=0V, Ta=-40°C to +85°C)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

∗

Static current consumption

IDDS

Static state, Tj=85°C

 

–

–

80

µA

 

Input leakage current

ILI

 

 

-1

–

1

µA

 

Off-state leakage current

IOZ

 

 

-1

–

1

µA

 

High-level output voltage

VOH

IOH=-0.6mA (Type1), IOH=-2mA (Type2),

VDD

–

–

V

 

 

 

IOH=-4mA (Type3), VDD=Min.

-0.2

 

 

 

 

Low-level output voltage

VOL

IOL=0.6mA (Type1), IOL=2mA (Type2),

–

–

0.2

V

 

 

 

IOL=4mA (Type3), VDD=Min.

 

 

 

 

 

 

High-level input voltage

VIH

CMOS level, VDD=Max.

 

1.6

–

–

V

 

Low-level input voltage

VIL

CMOS level, VDD=Min.

 

–

–

0.3

V

 

Positive trigger input voltage

VT+

CMOS Schmitt

 

0.4

–

1.6

V

 

Negative trigger input voltage

VT-

CMOS Schmitt

 

0.3

–

1.4

V

 

Hysteresis voltage

VH

CMOS Schmitt

 

0

–

–

V

 

Pull-up resistor

RPU

VI=0V

Other than DSIO

120

480

1200

kΩ

 

 

 

 

DSIO

60

240

600

kΩ

 

Pull-down resistor

RPD

VI=VDD (ICEMD)

 

60

240

600

kΩ

 

Input pin capacitance

CI

f=1MHz, VDD=0V

 

–

–

10

pF

 

Output pin capacitance

CO

f=1MHz, VDD=0V

 

–

–

10

pF

 

I/O pin capacitance

CIO

f=1MHz, VDD=0V

 

–

–

10

pF

 

Note: See Appendix B for pin characteristics.

A-74

EPSON

S1C33L03 PRODUCT PART