Epson S1C33L03 manual 98

8 ELECTRICAL CHARACTERISTICS

DRAM access cycle common characteristics

1) 3.3 V/5.0 V dual power source

(Unless otherwise specified: VDDE=5.0V±0.5V, VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)

	Item		Symbol	Min.	Max.	Unit	∗
	#RAS signal delay time (1)		tRASD1		10	ns
	#RAS signal delay time (2)		tRASD2		10	ns
	#RAS signal pulse width		tRASW	tCYC(2+WC)-10		ns
	#CAS signal delay time (1)		tCASD1		10	ns
	#CAS signal delay time (2)		tCASD2		10	ns
	#CAS signal pulse width		tCASW	tCYC(0.5+WC)-5		ns
	Read signal delay time (3)		tRDD3		10	ns
	Read signal pulse width (2)		tRDW2	tCYC(2+WC)-10		ns
	Write signal delay time (3)		tWRD3		10	ns
	Write signal pulse width (2)		tWRW2	tCYC(2+WC)-10		ns
2) 3.3 V single power source
		(Unless otherwise specified: VDDE=VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	#RAS signal delay time (1)		tRASD1		10	ns
	#RAS signal delay time (2)		tRASD2		10	ns
	#RAS signal pulse width		tRASW	tCYC(2+WC)-10		ns
	#CAS signal delay time (1)		tCASD1		10	ns
	#CAS signal delay time (2)		tCASD2		10	ns
	#CAS signal pulse width		tCASW	tCYC(0.5+WC)-10		ns
	Read signal delay time (3)		tRDD3		10	ns
	Read signal pulse width (2)		tRDW2	tCYC(2+WC)-10		ns
	Write signal delay time (3)		tWRD3		10	ns
	Write signal pulse width (2)		tWRW2	tCYC(2+WC)-10		ns
3) 2.0 V single power source
		(Unless otherwise specified: VDDE=VDD=2.0V±0.2V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	#RAS signal delay time (1)		tRASD1		20	ns
	#RAS signal delay time (2)		tRASD2		20	ns
	#RAS signal pulse width		tRASW	tCYC(2+WC)-20		ns
	#CAS signal delay time (1)		tCASD1		20	ns
	#CAS signal delay time (2)		tCASD2		20	ns
	#CAS signal pulse width		tCASW	tCYC(0.5+WC)-20		ns
	Read signal delay time (3)		tRDD3		20	ns
	Read signal pulse width (2)		tRDW2	tCYC(2+WC)-20		ns
	Write signal delay time (3)		tWRD3		20	ns
	Write signal pulse width (2)		tWRW2	tCYC(2+WC)-20		ns

A-82 EPSON S1C33L03 PRODUCT PART