Epson S1C33L03 manual 99

8 ELECTRICAL CHARACTERISTICS

DRAM random access cycle and DRAM fast-page cycle

1) 3.3 V/5.0 V dual power source

(Unless otherwise specified: VDDE=5.0V±0.5V, VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)

	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCF		tCYC(1+WC)-25	ns
	#RAS access time		tRACF		tCYC(1.5+WC)-25	ns
	#CAS access time		tCACF		tCYC(0.5+WC)-25	ns
2) 3.3 V single power source
		(Unless otherwise specified: VDDE=VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCF		tCYC(1+WC)-25	ns
	#RAS access time		tRACF		tCYC(1.5+WC)-25	ns
	#CAS access time		tCACF		tCYC(0.5+WC)-25	ns
3) 2.0 V single power source
		(Unless otherwise specified: VDDE=VDD=2.0V±0.2V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCF		tCYC(1+WC)-60	ns
	#RAS access time		tRACF		tCYC(1.5+WC)-60	ns
	#CAS access time		tCACF		tCYC(0.5+WC)-60	ns

EDO DRAM random access cycle and EDO DRAM page cycle

1) 3.3 V/5.0 V dual power source

(Unless otherwise specified: VDDE=5.0V±0.5V, VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)

	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCE		tCYC(1.5+WC)-25	ns
	#RAS access time		tRACE		tCYC(2+WC)-25	ns
	#CAS access time		tCACE		tCYC(1+WC)-15	ns
	Read data setup time		tRDS2	20		ns
2) 3.3 V single power source
		(Unless otherwise specified: VDDE=VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCE		tCYC(1.5+WC)-25	ns
	#RAS access time		tRACE		tCYC(2+WC)-25	ns
	#CAS access time		tCACE		tCYC(1+WC)-20	ns
	Read data setup time		tRDS2	20		ns
3) 2.0 V single power source
		(Unless otherwise specified: VDDE=VDD=2.0V±0.2V, VSS=0V, Ta=-40°C to +85°C)
	Item		Symbol	Min.	Max.	Unit	∗
	Column address access time		tACCE		tCYC(1.5+WC)-60	ns
	#RAS access time		tRACE		tCYC(2+WC)-60	ns
	#CAS access time		tCACE		tCYC(1+WC)-60	ns
	Read data setup time		tRDS2	20		ns

A-1

A-8

S1C33L03 PRODUCT PART EPSON A-83