MEMORY INTERFACING
the RAS# from that bank and BEO# with the CAS# signal to enable the least- significant byte
The Write Enable (WE#) and the multiplexed address signals are connected to every DRAM module in both banks. For drive considerations the multiplexed address is gen- erated separately for each bank.
A single WE# control signal and four CAS control signals ensure that only those DRAM bytes selected for a write cycle are enabled. All other data bytes maintain their outputs in the
DRAMs require both the row and column addresses to be placed sequentially onto the multiplexed address bus. A set of 74F258 multiplexers accomplishes this function.
Four 74F245 octal transceivers buffer the DRAM from the data bus. Most DRAMs used in the
Two PLDs are used to monitor the Intel386 DX microprocessor status signals and gen- erate the appropriate control signals for the DRAM, multiplexer, and transceivers. PLD codes and pin descriptions for the
• DRAMPl
Performs bus cycle tracking
Monitors the Inte1386 DX microprocessor DRAM chip select logic
Signals start of DRAM cycles to DRAMP2
Generates the RAS# signals and the Address Mux select signal (ROWSEL)
Controls refresh cycle arbitration and controls the address output enables for refresh cycles
• DRAMP2
Receives and stores DRAM refresh requests from the refresh counter
Keeps track of DRAM banks requiring precharge time