MEMORY INTERFACING
=50 - 30 - 6 + 2
=16 nanoseconds
The worst case address hold time from RAS# occurs when the ROWSEL signal is at a minimum and RAS# delay is at a maximum.
TRAH : Row address hold time
=(1 x CLK2 period) + PLD RegOut Min (ROWSEL) + Mux Prop Min (S to Z) - PLD RegOut Max (RAS#)
=25 + 2 + 4 - 12
=19 nanoseconds
Because CAS# is generated a CLK2 cycle later for write cycles, worst case consider- ations are the column address setup time for read cycles and the column address hold time for write cycles.
TASC : Column address setup time (read cycles)
=(1 x CLK2) - PLD RegOut Max (ROWSEL) - Mux Prop Max (S to Z) + PLD RegOut Min (CAS#) + (2 x
=25 - 12 - 11 + 1.5 + 6
=9.5 nanoseconds
TCAH : Column address hold time (write cycles)
=(2 x CLK2) - PLD RegOut Max (CAS#) - (2X
=50 - 6 - 12 + 2 + 4
=38 nanoseconds
The write enable (WE#) signal is generated two CLK2 before CAS# on write cycle and one CLK2 before CAS# on a read cycle.
TRCS : Read command setup time
=(1 x CLK2) - PLD RegOut Max (WE#) + PLD RegOut Min (CAS#) + (2 x
=25 - 6 + 1.5 + 6
=26.5 nanoseconds