MEMORY INTERFACING

=50 - 30 - 6 + 2

=16 nanoseconds

The worst case address hold time from RAS# occurs when the ROWSEL signal is at a minimum and RAS# delay is at a maximum.

TRAH : Row address hold time

=(1 x CLK2 period) + PLD RegOut Min (ROWSEL) + Mux Prop Min (S to Z) - PLD RegOut Max (RAS#)

=25 + 2 + 4 - 12

=19 nanoseconds

Because CAS# is generated a CLK2 cycle later for write cycles, worst case consider- ations are the column address setup time for read cycles and the column address hold time for write cycles.

TASC : Column address setup time (read cycles)

=(1 x CLK2) - PLD RegOut Max (ROWSEL) - Mux Prop Max (S to Z) + PLD RegOut Min (CAS#) + (2 x Or-gate Prop Min)

=25 - 12 - 11 + 1.5 + 6

=9.5 nanoseconds

TCAH : Column address hold time (write cycles)

=(2 x CLK2) - PLD RegOut Max (CAS#) - (2X Or-gate Prop Max) + PLD RegOutMin (ROWSEL) + Mux Prop Min (S to Z)

=50 - 6 - 12 + 2 + 4

=38 nanoseconds

The write enable (WE#) signal is generated two CLK2 before CAS# on write cycle and one CLK2 before CAS# on a read cycle.

TRCS : Read command setup time

=(1 x CLK2) - PLD RegOut Max (WE#) + PLD RegOut Min (CAS#) + (2 x Or-gate Prop Min)

=25 - 6 + 1.5 + 6

=26.5 nanoseconds

6-21

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