SDRAM Controller Operation

15.2.2.1DRAM Control Register (DCR)

The DCR, shown in Figure 15-2,controls refresh logic.

Field

Reset

R/W

Addr

15

14

13

12

11

10

9

8

0

 

 

 

 

 

 

 

 

 

 

NAM

COC

IS

RTIM

 

 

RC

 

 

 

 

 

 

 

 

 

Uninitialized

R/W

IPSBAR + 0x040

Figure 15-2. DRAM Control Register (DCR)

Table 15-4describes DCR fields.

 

 

 

Table 15-4. DCR Field Descriptions

 

 

 

 

Bits

Name

 

Description

 

 

 

15-14

Reserved, should be cleared.

 

 

 

13

NAM

No address multiplexing. Some implementations require external multiplexing. For example, when linear

 

 

addressing is required, the SDRAM should not multiplex addresses on SDRAM accesses.

 

 

0 The SDRAM controller multiplexes the external address bus to provide column addresses.

 

 

1 The SDRAM controller does not multiplex the external address bus to provide column addresses.

 

 

 

12

COC

Command on SDRAM clock enable (SCKE). Implementations that use external multiplexing (NAM = 1) must

 

 

support command information to be multiplexed onto the SDRAM address bus.

 

 

0 SCKE functions as a clock enable; self-refresh is initiated by the SDRAM controller through DCR[IS].

 

 

1 SCKE drives command information. Because SCKE is not a clock enable, self-refresh cannot be used (setting

 

 

 

DCR[IS]). Thus, external logic must be used if this functionality is desired. External multiplexing is also

 

 

 

responsible for putting the command information on the proper address bit.

 

 

 

11

IS

Initiate self-refresh command.

 

 

0 Take no action or issue a SELFX command to exit self refresh.

 

 

1 If DCR[COC] = 0, the SDRAM controller sends a SELF command to both SDRAM blocks to put them in

 

 

 

low-power, self-refresh state where they remain until IS is cleared. When IS is cleared, the controller sends a

 

 

 

SELFX command for the SDRAMs to exit self-refresh. The refresh counter is suspended while the SDRAMs

 

 

 

are in self-refresh; the SDRAM controls the refresh period.

 

 

 

10–9

RTIM

Refresh timing. Determines the timing operation of auto-refresh in the SDRAM controller. Specifically, it

 

 

determines the number of bus clocks inserted between a REF command and the next possible ACTV command.

 

 

This same timing is used for both memory blocks controlled by the SDRAM controller. This corresponds to tRC

 

 

in the SDRAM specifications.

 

 

00

3 clocks

 

 

01

6 clocks

 

 

1x

9 clocks

 

 

 

8–0

RC

Refresh count. Controls refresh frequency. The number of bus clocks between refresh cycles is (RC + 1) x 16.

 

 

Refresh can range from 16–8192 bus clocks to accommodate both standard and low-power SDRAMs with bus

 

 

clock operation from less than 2 MHz to greater than 50 MHz.

 

 

The following example calculates RC for an auto-refresh period for 4096 rows to receive 64 ms of refresh every

 

 

15.625 µs for each row (1031 bus clocks at 66 MHz). This operation is the same as in asynchronous mode.

 

 

# of bus clocks = 1031 = (RC field + 1) x 16

 

 

RC = (1031 bus clocks/16) -1 = 63.44, which rounds to 63; therefore, RC = 0x3F.

 

 

 

 

MOTOROLA

Chapter 15. Synchronous DRAM Controller Module

15-5

Page 319
Image 319
Motorola MCF5281, MCF5282 Dram Control Register DCR, DCR, shown in -2,controls refresh logic, 4describes DCR fields, Rtim