Flash Memory Characteristics

Table 33-7. QADC Conversion Specifications (Operating)

(VDDH and VDDA = 5.0 Vdc ± 0.5V, VDD= 2.7-3.6V,VSS and VSSA= 0 Vdc, VRH – VRL = 5 Vdc ± 0.5V, TA within operating

temperature range, fsys = 16 MHz)

Num

 

 

Parameter

Symbol

Min

Max

Unit

 

 

 

 

 

 

1

QADC Clock (QCLK) Frequency1

FQCLK

0.5

2.1

MHz

2

Conversion Cycles

CC

14

28

QCLK

 

 

 

 

 

 

cycles

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Conversion Time

 

 

 

 

3

F

QCLK

= 2.0 MHz1

 

 

 

s

 

 

Min = CCW/IST =%00

TCONV

7.0

14.0

 

 

Max = CCW/IST =%11

 

 

 

 

 

 

 

 

 

 

4

Stop Mode Recovery Time

TSR

10

s

5

Resolution2

5

mV

6

Absolute (total unadjusted) error 3, 4, 5

AE

 

 

 

FQCLK = 2.0 MHz 2, 2 clock input sample time

 

-2

2

Counts

 

 

7

Absolute (total unadjusted) error 3, 4, 5

 

 

 

FQCLK = 2.0 MHz 2, 2 clock input sample time

 

-3

3

Counts

 

 

1Conversion characteristics vary with FQCLK rate. Reduced conversion accuracy occurs at max FQCLK rate. Using the QADC pins as GPIO functions during conversions may result in degraded results. Best QADC conversion accuracy is achieved at a frequency of 2 MHz.

2At VRH – VRL = 5.12 V, one count = 5 mV

3Accuracy tested and guaranteed at VRH – VRL = 5.0V ± 0.5V

4Current Coupling Ratio, K, is defined as the ratio of the output current, Iout, measured on the pin under test to the injection current, Iinj, when both adjacent pins are overstressed with the specified injection current. K = Iout/Iinj. The input voltage error on the channel under test is calculated as Verr = Iinj * K * RS.

5Performance expected with production silicon.

33.6 Flash Memory Characteristics

The Flash memory characteristics are shown in Table 33-8and Table 33-9.

Table 33-8. SGFM Flash Program and Erase Characteristics

(V

= 2.7 to 3.6 V, T

= T

L

to T )1

 

 

 

DDF

A

 

H

 

 

 

Parameter

Symbol

 

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

System clock (read only)

fsys(R)

 

 

0

80

MHz

System clock (program/erase)2

f

 

 

0.15

80

MHz

 

sys(P/E)

 

 

 

 

 

 

1TL is defined to be –40°C and TH is defined to be 85°C

2Refer to the Flash section for more information

MOTOROLA

Chapter 33. Electrical Characteristics

33-9

Page 759
Image 759
Motorola MCF5281 Flash Memory Characteristics, Qadc Conversion Specifications Operating, Num Parameter Symbol Min Max Unit